公开(公告)号：JP2000269515A

公开(公告)日：2000-09-29

申请号：JP2000064964

申请日：2000-03-09

Applicant: IBM

Inventor： ALESSANDRO SEZARE KAREGARI ,  DIMITRAKOPOULOS CHRISTOS D ,  PURUSHOTHAMAN SAMPATH

IPC: H01L51/05 ,  H01L21/00 ,  H01L21/314 ,  H01L21/316 ,  H01L21/336 ,  H01L29/786 ,  H01L51/30 ,  H01L51/40 ,  H01L51/00

Abstract: PROBLEM TO BE SOLVED: To widen a scope of material and process which can be used for a thin film transistor device by a method wherein, by use of an organic semiconductor layer coming into contact with a gate insulator of an inorganic mixture oxide, any one of the semiconductor layer and gate insulator is deposited to the other at substrate temperatures in a predetermined range. SOLUTION: An organic semiconductor layer 15 of a thin film transistor(TFT) device is deposited onto a gate insulation layer 13 as an inorganic oxide at temperatures close to room temperatures. An organic semiconductor material suitable therefor is pentacene. The TFT is constituted by depositing a source 16 and drain 17 to an exposed surface of the organic semiconductor layer 15 by a low temperatures deposition process at temperatures close to room temperatures in compliance with a position of a gate 12, so that a channel definition isolation region 18 is positioned at a center of the gate 12. The layer operating by deposition at the temperatures close to the room temperatures such as 25 deg.C to 150 deg.C is suitable for an appropriate dielectric property demanded for the organic semiconductor, and it becomes possible to process by a substrate enduring at fairly lower temperatures, and a use for such substrate is spread.