公开(公告)号：DE1519812B1

公开(公告)日：1971-04-01

申请号：DE1519812

申请日：1965-08-17

Applicant: IBM

Inventor： REISMAN ARNOLD ,  BERKENBLIT MELVIN ,  ALYANAKYAN SATENIK ALIN

IPC: C22B41/00 ,  C23C16/14 ,  C30B25/02 ,  B01J17/32

Abstract: Semi-conductor material, particularly Ge, is epitaxially deposited on a substrate by reacting the material with a hydrogen-inert gas-halide mixture to produce compounds thereof in the vapour phase and perturbing the equilibrium of this vapour phase by introducing a perturbing gas, such as hydrogen or a mixture of hydrogen and an inert gas, to produce the required deposition. As shown, Ge source material is packed within a tube 11 placed in a furnace 14 kept at 500-900 DEG C. (preferably 600 DEG C.). A mixture of HI and He is passed through the tube 11 to produce a vaporous mixture containing GeI2 which passes out through a nozzle 16 into a deposition chamber 17 held at 350 DEG C. H2, with or without He, is passed into the deposition chamber through a coaxial nozzle 18 to perturb the equilibrium and cause epitaxial deposition on a Ge substrate in a quartz boat 26.