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    Semiconductor preparation and deposition process
    2.
    发明授权
    Semiconductor preparation and deposition process 失效
    半导体制备和沉积过程

    公开(公告)号：US3577286A

    公开(公告)日：1971-05-04

    申请号：US3577286D

    申请日：1967-10-11

    Applicant: IBM

    Inventor： BERKENBLIT MELVIN ,  REISMAN ARNOLD

    IPC: C01G17/04 ,  C30B25/02 ,  H01L21/00 ,  H01L21/205 ,  H01L7/36 ,  C23C11/00 ,  H01L7/00

    CPC classification number: H01L21/02381 ,  C01G17/04 ,  C30B25/02 ,  C30B29/08 ,  H01L21/00 ,  H01L21/02395 ,  H01L21/02532 ,  H01L21/02661 ,  Y10S438/974

    Abstract: A PROCESS WHICH INCLUDES THE PREPARATION OF A SUBSTRATE AND SUBSEQUENT EPITAXIAL DEPOSITION OF GERMANIUM ON THE SUBSTRATE IS DESCRIBED. PREPARATION OF THE SUBSTRATE, EITHER GERMANIUM OR GALLIUM ARSENIDE, INCLUDES A CHEMICAL TREATMENT STEP TO REMOVE SURFACE FILMS, RAPID QUENCHING, RINSING AND DRYING STEPS, AND A HEATING STEP PRIOR TO DEPOSITION. DEPOSITION OF GERMANIUM IS CARRIED OUT IN AN OPEN TUBE DISPROPORTIONATION SYSTEM, BY INTRODUCING A GERMANIUM HALIDE SPECIE WHICH IS CAPABEL OF DISPROPORTIONATING AT A DEPOSITION SITE IN CONCENTRATIONS AND AT VELOCITIES SUCH THAT THE DEPOSITION OF GERMANIUM TENDS TO BE SURFACE LIMITED RATHER THAN MASS TRANSPORT LIMITED. THE DEPOSITION, PREFERABLY CARRIED OUT ON A (110) ORIENTED SUBSTRATE, IS EPITAXIAL, SMOOTH AND SHINY AND IS SUITABLE FOR SUBSEQUENT PROCESSING REQUIRING PHOTOGRAPHIC TECHNIQUES.

    D R A W I N G

    Glass fabrication process
    3.
    发明授权
    Glass fabrication process 失效
    玻璃制造工艺

    公开(公告)号：US3862831A

    公开(公告)日：1975-01-28

    申请号：US35302673

    申请日：1973-04-20

    Applicant: IBM

    Inventor： BERKENBLIT MELVIN ,  LUSSOW ROBERT O ,  REISMAN ARNOLD

    IPC: C03C27/04 ,  C03B19/00 ,  C03C3/072 ,  C03C3/102 ,  C03C17/02 ,  C03C27/06 ,  C03C27/10 ,  C07C17/04

    CPC classification number: C03C3/102 ,  C03B19/00 ,  C03C3/072 ,  C03C17/02 ,  H01J2211/38

    Abstract: A process for the in situ fabrication of a glass from an admixed frit, for example, of two starting glasses on the required existing substrate structure therefore. The admixed frit comprises a low glass transition temperature glass and a higher glass transition temperature glass, which glasses are uniquely capable of forming a continuous vitreous phase over their entire compositional range. During thermal cycling, the low glass transition temperature glass flows out and solubilizes the higher glass transition temperature glass to thereby synthesize in situ a new glass. The temperature required to form the glass by the in situ process is less than that required where a glass of identical composition is first preequilibrated externally and then applied in frit form to the existing substrate structure and flowed out thereon. The in situ synthesized new glass softens and flows at a temperature higher than that of the low glass transistion temperature glass and lower than that of the higher glass transition temperature glass, and exhibits a glass transition temperature intermediate to the two starting glasses.

    Abstract translation: 因此，在所需的现有衬底结构上从混合玻璃料例如两个起始玻璃原位制造玻璃的方法。 混合玻璃料包括低玻璃化转变温度玻璃和较高玻璃化转变温度的玻璃，该玻璃独特地能够在其整个组成范围内形成连续的玻璃相。 在热循环期间，低玻璃化转变温度玻璃流出并溶解较高的玻璃化转变温度玻璃，从而原位合成新的玻璃。 通过原位方法形成玻璃所需的温度小于首先在外部首先平衡的玻璃相同的组合物然后以玻璃料形式施加到现有的衬底结构并在其上流出所需的温度。 原位合成的新玻璃在高于低玻璃化转变温度玻璃的温度下软化并流动，并且低于较高玻璃化转变温度玻璃的温度，并且在两个起始玻璃之间呈现玻璃化转变温度。

    5.
    发明专利
    未知

    公开(公告)号：DE2418462A1

    公开(公告)日：1974-11-07

    申请号：DE2418462

    申请日：1974-04-17

    Applicant: IBM

    Inventor： BERKENBLIT MELVIN ,  LUSSOW ROBERT OTIS ,  REISMAN ARNOLD

    IPC: C03C27/04 ,  C03B19/00 ,  C03C3/072 ,  C03C3/102 ,  C03C17/02 ,  C03C27/06 ,  C03C27/10 ,  C03C3/10 ,  C03C3/14 ,  C03C3/24 ,  C03C3/30

    Abstract: A process for the in situ fabrication of a glass from an admixed frit, for example, of two starting glasses on the required existing substrate structure therefore. The admixed frit comprises a low glass transition temperature glass and a higher glass transition temperature glass, which glasses are uniquely capable of forming a continuous vitreous phase over their entire compositional range. During thermal cycling, the low glass transition temperature glass flows out and solubilizes the higher glass transition temperature glass to thereby synthesize in situ a new glass. The temperature required to form the glass by the in situ process is less than that required where a glass of identical composition is first preequilibrated externally and then applied in frit form to the existing substrate structure and flowed out thereon. The in situ synthesized new glass softens and flows at a temperature higher than that of the low glass transistion temperature glass and lower than that of the higher glass transition temperature glass, and exhibits a glass transition temperature intermediate to the two starting glasses.

    6.
    发明专利
    未知

    公开(公告)号：DE1521795A1

    公开(公告)日：1970-02-12

    申请号：DE1521795

    申请日：1965-08-11

    Applicant: IBM

    Inventor： BERKENBLIT MELVIN ,  REISMAN ARNOLD

    IPC: C23F3/00 ,  H01L21/00 ,  H01L21/302

    Abstract: Silicon or germanium crystals are vapourpolished by a stream of hydrogen iodide mixed with hydrogen or helium or a mixture thereof in a polishing chamber 9 through which the gas passes. Hydrogen or hydrogen and helium is passed through a heated packed bed 4 of iodine crystals, and hydrogen iodide is produced from the resulting mixture with iodine vapour in a platinum wool catalyst chamber 8.

    METHOD OF FORMING SMOOTH AND PINHOLE-FREE SILICON CARBIDE FILMS ON A SILICON SUBSTRATE
    7.
    发明专利
    METHOD OF FORMING SMOOTH AND PINHOLE-FREE SILICON CARBIDE FILMS ON A SILICON SUBSTRATE 未知

    公开(公告)号：DE2862062D1

    公开(公告)日：1982-11-25

    申请号：DE2862062

    申请日：1978-07-20

    Applicant: IBM

    Inventor： BALOG MOSHE ,  BERKENBLIT MELVIN ,  CHAN SEE-ARK ,  REISMAN ARNOLD

    IPC: C30B25/02 ,  B41J2/16 ,  C04B41/50 ,  C04B41/87 ,  C23C16/32 ,  C30B29/06 ,  C30B29/36 ,  B41J3/04 ,  C01B31/36

    Abstract: The invention provides a method for forming a protective silicon carbide (SiC) film on a silicon (Si) substrate. The method permits the formation of silicon carbide on the Si substrate on all surfaces simultaneously. The process is highlighted in that the silicon substrate to be coated is placed in a susceptor having tantalum carbide surfaces and which has a high purity ambient. The substrate is heated at a temperature about 1250 DEG C to remove native SiO2 from its surface. The system is then cooled to a temperature of about 900 DEG C and methane is added for about 30 minutes to thereby deposit a layer of carbon which is further reacted with the Si substrate at 1250 DEG C to form a smooth, pin hole free SiC film. SiC layers are also formed by a one step reaction in which methane is reacted directly with Si at 1250 DEG C.

    GLASS MAKING PROCESS
    8.
    发明专利
    GLASS MAKING PROCESS 未知

    公开(公告)号：AU6751774A

    公开(公告)日：1975-10-09

    申请号：AU6751774

    申请日：1974-04-03

    Applicant: IBM

    Inventor： LUSSOW ROBERT OTIS ,  REISMAN ARNOLD ,  BERKENBLIT MELVIN

    IPC: C03C27/04 ,  C03B19/00 ,  C03C3/072 ,  C03C3/102 ,  C03C17/02 ,  C03C27/06 ,  C03C27/10 ,  C03C3/30

    Abstract: A process for the in situ fabrication of a glass from an admixed frit, for example, of two starting glasses on the required existing substrate structure therefore. The admixed frit comprises a low glass transition temperature glass and a higher glass transition temperature glass, which glasses are uniquely capable of forming a continuous vitreous phase over their entire compositional range. During thermal cycling, the low glass transition temperature glass flows out and solubilizes the higher glass transition temperature glass to thereby synthesize in situ a new glass. The temperature required to form the glass by the in situ process is less than that required where a glass of identical composition is first preequilibrated externally and then applied in frit form to the existing substrate structure and flowed out thereon. The in situ synthesized new glass softens and flows at a temperature higher than that of the low glass transistion temperature glass and lower than that of the higher glass transition temperature glass, and exhibits a glass transition temperature intermediate to the two starting glasses.

    GAS COOLED MODULES FOR ELECTRICAL COMPONENTS
    9.
    发明专利
    GAS COOLED MODULES FOR ELECTRICAL COMPONENTS 未知

    公开(公告)号：DE3277156D1

    公开(公告)日：1987-10-08

    申请号：DE3277156

    申请日：1982-05-24

    Applicant: IBM

    Inventor： REISMAN ARNOLD ,  BERKENBLIT MELVIN ,  MERZ CHARLES JOSEPH

    IPC: H01L23/42 ,  H01L23/44 ,  H01L23/473

    Abstract: A heat dissipating system for cooling circuit chips or modules is described. The system includes circuit chips (30) which are vertically mounted, an inert gas (40) at an elevated pressure being contained within an encased module (20) for providing an enhanced thermal coupling between the chips contained therein, and the walls (22, 26) of the encased module, whereby heat removal from the chips or modules is increased. This enhanced thermal coupling is combined with a reduction in the temperature of the wall (22) of the encased modules so as to reduce the thermal resistance between the surrounding gas and the chips or modules to be cooled, whereby heat removal from the circuit chips or modules is substantially increased. The gas is maintained at a pressure above 240 kPa (35 psi), preferably above 480 kPa (70 psi). Helium is a suitable thermally conducting inert gas.

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