Abstract:
A device and method is provided for reducing power consumption in memory devices. The preferred embodiment reduces power consumption by providing a sense amplifier that reduces power consumption while providing high performance. In the preferred embodiment the sense amplifier comprises a bi-directional sense amp that is configurable for use on low power static random access memory (SRAM) devices. The bi-directional sense amp allows the same sense amp to be used for both read and write operations on the memory cells. The preferred embodiment sense amp facilitates the use of differential data buses, further reducing power consumption while providing high performance. Thus, the preferred embodiment bi-directional differential sense amp reduces the device size and complexity, reducing power consumption while providing high performance memory access.
Abstract:
A directory memory having simultaneous writing and bypass capabilities. A data output bit (DB n ) from a respective memory cell of a memory array is applied to a control input of a first differential amplifier (63, 66), while comparison input data is applied to inputs of a second differential amplifier (64, 65). The outputs of corresponding transistors of the two differential amplifiers are connected together. Current switch transistors (77, 78), operated in response to a bypass select signal, supply current only to one or the other of the two differential amplifiers. The differential output signal produced across the commonly connected outputs of the two differential amplifier circuits is buffered and amplified with a push-pull output circuit (62, 87).