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公开(公告)号：DE112010003412T5
公开(公告)日：2012-08-16
申请号：DE112010003412
申请日：2010-08-12
Applicant: IBM
Inventor： STAMPER ANTHONY K , ANDERSON FELIX P , MCDEVITT THOMAS L
IPC: B81C1/00
Abstract: Integrierte MEMS-Schalter, Entwicklungsstrukturen und Verfahren zum Herstellen solcher Schalter werden bereitgestellt. Zu dem Verfahren gehört das Bilden wenigstens eines Vorsprungs (32a) von Opfermaterial (36) auf einer Seite einer Schalteinheit (34), die von dem Opfermaterial umgeben ist. Das Verfahren enthält ferner das Entfernen des Opfermaterials durch wenigstens eine Öffnung (40), die auf delteinheit gebildet wird, und das Verschließen der wenigstens einen Öffnung mit einem Deckmaterial (42).
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公开(公告)号：GB2485714B8
公开(公告)日：2015-09-23
申请号：GB201203306
申请日：2010-08-12
Applicant: IBM , RF MICRO DEVICES INC
Inventor： ANDERSON FELIX P , MCDEVITT THOMAS L , STAMPER ANTHONY K , HAMMOND JONATHAN HALE , COSTA JULIO CARLOS
IPC: B81C1/00
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公开(公告)号：GB2506770B8
公开(公告)日：2015-09-23
申请号：GB201321363
申请日：2010-08-12
Applicant: IBM , RF MICRO DEVICES INC
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公开(公告)号：GB2485714B
公开(公告)日：2014-05-14
申请号：GB201203306
申请日：2010-08-12
Applicant: IBM , RF MICRO DEVICES INC
Inventor： ANDERSON FELIX P , MCDEVITT THOMAS L , STAMPER ANTHONY K , HAMMOND JONATHAN HALE , COSTA JULIO CARLOS
IPC: B81C1/00
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Patent Agency Ranking
公开(公告)号：GB2485714A
公开(公告)日：2012-05-23
申请号：GB201203306
申请日：2010-08-12
Applicant: IBM , RF MICRO DEVICES INC
Inventor： ANDERSON FELIX P , MCDEVITT THOMAS L , STAMPER ANTHONY K , HAMMOND JONATHAN HALE , COSTA JULIO CARLOS
IPC: B81C1/00
Abstract: Integrated MEMS switches, design structures and methods of fabricating such switches are provided. The method includes forming at least one tab (32a) of sacrificial material (36) on a side of a switching device (34) which is embedded in the sacrificial material. The method further includes stripping the sacrificial material through at least one opening (40) formed on the at least one tab which is on the side of the switching device, and sealing the at least one opening with a capping material (42).
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公开(公告)号：GB2506770A8
公开(公告)日：2015-09-23
申请号：GB201321363
申请日：2010-08-12
Applicant: IBM , RF MICRO DEVICES INC
Inventor： ANDERSON FELIX P , MCDEVITT THOMAS LEDDY , STAMPER ANTHONY K , COSTA JULIO CARLOS , HAMMOND JONATHAN HALE
Abstract: A MEMS structure, comprising a lower forcing electrode and a lower contact electrode, remote from the lower forcing electrode; a cantilever beam 34 is positioned above the lower forcing electrode and the lower contact electrode; a capping layer 42 hermetically seals the lower forcing electrode, the lower contact electrode and the cantilever beam 34, the capping layer 42 having a sealed portion 40 positioned on a side of the lower contact electrode, remote from the lower forcing electrode and an end portion of the cantilever beam 34. Wherein the cantilever beam 34 may be devoid of stresses from material variability of a sealing material used to seal the capping layer 42.
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公开(公告)号：GB2485714A8
公开(公告)日：2015-09-23
申请号：GB201203306
申请日：2010-08-12
Applicant: IBM , RF MICRO DEVICES INC
Inventor： ANDERSON FELIX P , MCDEVITT THOMAS L , STAMPER ANTHONY K , HAMMOND JONATHAN HALE , COSTA JULIO CARLOS
IPC: B81C1/00
Abstract: Integrated MEMS switches, design structures and methods of fabricating such switches are provided. The method includes forming at least one tab (32a) of sacrificial material (36) on a side of a switching device (34) which is embedded in the sacrificial material. The method further includes stripping the sacrificial material through at least one opening (40) formed on the at least one tab which is on the side of the switching device, and sealing the at least one opening with a capping material (42).
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公开(公告)号：GB2506770B
公开(公告)日：2014-08-20
申请号：GB201321363
申请日：2010-08-12
Applicant: IBM
Inventor： ANDERSON FELIX P , MCDEVITT THOMAS LEDDY , STAMPER ANTHONY K
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公开(公告)号：GB2506770A
公开(公告)日：2014-04-09
申请号：GB201321363
申请日：2010-08-12
Applicant: IBM , RF MICRO DEVICES INC
Inventor： ANDERSON FELIX P , MCDEVITT THOMAS LEDDY , STAMPER ANTHONY K , COSTA JULIO CARLOS , HAMMOND JONATHAN HALE
Abstract: A MEMS structure, comprising a lower forcing electrode and a lower contact electrode, remote from the lower forcing electrode; a cantilever beam 34 is positioned above the lower forcing electrode and the lower contact electrode; a capping layer 42 hermetically seals the lower forcing electrode, the lower contact electrode and the cantilever beam 34, the capping layer 42 having a sealed portion 40 positioned on a side of the lower contact electrode, remote from the lower forcing electrode and an end portion of the cantilever beam 34. Wherein the cantilever beam 34 may be devoid of stresses from material variability of a sealing material used to seal the capping layer 42.
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