公开(公告)号：JP2012069964A

公开(公告)日：2012-04-05

申请号：JP2011231718

申请日：2011-10-21

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： ASHIMA B CHAKRABARTY ,  ANTHONY I CHOU ,  TOSHIHARU FURUKAWA ,  STEVEN J HOLMES ,  WESLEY C NATAL

IPC: H01L21/205 ,  H01L21/336 ,  H01L29/78

CPC classification number: H01L29/7833 ,  H01L21/02532 ,  H01L21/02587 ,  H01L21/0262 ,  H01L21/02639 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/6659 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/10126 ,  H01L2224/13023 ,  H01L2924/1305 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a structure and method for selective deposition of germanium spacers on nitride.SOLUTION: A method of selectively forming a germanium structure within semiconductor manufacturing processes removes the native oxide in a chemical oxide removal (COR) process and then exposes the heated nitride surface and a oxide surface to a heated germanium containing gas to selectively form germanium only on the nitride surface but not the oxide surface.

Abstract translation: 要解决的问题：提供用于在氮化物上选择性沉积锗间隔物的结构和方法。 解决方案：在半导体制造工艺中选择性地形成锗结构的方法在化学氧化物去除（COR）工艺中去除天然氧化物，然后将加热的氮化物表面和氧化物表面暴露于加热的含锗气体中以选择性地形成 锗仅在氮化物表面上而不是氧化物表面。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：SG111048A1

公开(公告)日：2005-05-30

申请号：SG200201205

申请日：2002-02-28

Applicant: IBM

Inventor： MUKESH KHARE ,  PAUL D AGNELLO ,  ANTHONY I CHOU ,  TERENCE BLACKWELL HOOK ,  ANDA C MOCUTA

IPC: H01L21/74 ,  H01L29/423 ,  H01L29/786 ,  H01L21/786

Abstract: An SOI circuit configuration effective for minimizing plasma-induced charging damage during fabrication comprises the formation of charge collectors connected to the gate electrode and the semiconductor body, wherein each one of the charge collectors have the same or substantially the same shape and dimension. A connecting structure formed between a device fabricated on SOI substrate and substrate is delayed until the latter stages of processing.