公开(公告)号：JPH0653309A

公开(公告)日：1994-02-25

申请号：JP11868193

申请日：1993-05-20

Applicant: IBM

Inventor： ANTON NENADEITSUKU ,  KENISU FUAAMAN ,  ROBAATO DABURIYUU PASUKO

IPC: B23Q3/08 ,  B25B11/00 ,  C23C14/50 ,  H01L21/683 ,  H01L21/68

Abstract: PURPOSE: To planarize the surface of a flexible substrate within a submicron- order allowance by providing separate vacuum elements for supporting the four peripheral points and the center of the substrate. CONSTITUTION: Vacuum elements 10, 12 are fixed to a frame 20. Vacuum elements 14, 16, 18 are fixed to a gimbal disc 26, which allows three degrees of freedom for their rotary motions, relative to the frame 20 and has passages 30, coupling an external vacuum source hose mount 31 with respect to the vacuum elements 14, 16, 18 through flexible hoses 32. The frame 20 has passages 34, coupling an external vacuum source hose 35 to the vacuum elements 10, 12 and a passage 36, coupling the gimbal disc 26 to appropriately compressed air feed source through an external hose mount 38. A flexible substrate having a flat lower surface is placed near five support members and a triangular plane, defined by three support members contacted to the disc 26, is adjusted and the support members are locked.

公开(公告)号：JPH02278822A

公开(公告)日：1990-11-15

申请号：JP5391490

申请日：1990-03-07

Applicant: IBM

Inventor： JIEFURII UIRIAMU KAA ,  ROORENSU DANIERU DEBUIDO ,  UIRIAMU REZURIII GASURIII ,  FURANKU BENJIYAMIN KAAFUMAN ,  UIRIAMU JIYON PATORITSUKU ,  KENESU PAAKAA ROTSUDOBERU ,  ROBAATO UIRIAMU PASUKO ,  ANTON NENADEITSUKU

IPC: B24B37/00 ,  C09G1/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/48

Abstract: PURPOSE: To provide an allowable flat substrate surface by contacting a substrate which has etching speed different from that of specified etching liquid with a polishing pad and contacting that substrate with a slurry containing the etching liquid composed of abradant particles, chelate salt of transient metal and its solvent. CONSTITUTION: Concerning an electronic part substrate having two characteristics such as a ceramic substrate having metal bias, for example, having the etching speed different from that of specified etching liquid, this substrate is contacted with the polishing pad, contacted with the slurry containing the specified etching liquid, and planarized by chemical/mechanical polishing. This slurry is composed of the abradant particles, chelate salt of transient metal and solvent for this salt, the chelate salt of transient metal exerts chemical operation or etching operation upon the solvent, and the abradant particles exert mechanical operation in cooperation with the polishing pad. Thus, the substrate surface can be almost planarized.