公开(公告)号：JPH0817831A

公开(公告)日：1996-01-19

申请号：JP29101294

申请日：1994-11-25

Applicant: IBM

Inventor： KURAUSU DEIITORITSUCHI BEIYAA ,  UIRIAMU RESURII GASURII ,  SUTANREE RICHIYAADO MAAKAREUIT ,  ERITSUKU MENDERU ,  UIRIAMU JIYON PATORITSUKU ,  KIYASARIIN ARISU PERII ,  UIRIAMU ARON PURISUKIN ,  YAKOBU RAIZUMAN ,  POORU MAACHIN SHIYAIBURU ,  CHIYAARUZU RANBAATO SUTANDOREI

IPC: H01L21/3205 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/3213 ,  H01L21/768

Abstract: PURPOSE: To form a structure with a metal layer and a silicon dioxide layer on a same flat surface on a substrate. CONSTITUTION: A metal layer pattern 72 of Al-Cu is formed on a substrate 70, and a silicon dioxide layer 74 is adhered on it. The upper surface of the substrate is chemically and mechanically polished using a basic slurry containing silica particle until the surfaces of the metal layer pattern 72 and the silicon dioxide layer 74 become essentially the same flat surfaces.

公开(公告)号：JPS58171826A

公开(公告)日：1983-10-08

申请号：JP20051582

申请日：1982-11-17

Applicant: IBM

Inventor： BAANAADO KAATO BISHIYOFU ,  UIRIAMU JIYON PATORITSUKU ,  TOOMASU HAIDO SUTORADOUITSUKU

IPC: C30B33/00 ,  H01L21/322

公开(公告)号：JPH02278822A

公开(公告)日：1990-11-15

申请号：JP5391490

申请日：1990-03-07

Applicant: IBM

Inventor： JIEFURII UIRIAMU KAA ,  ROORENSU DANIERU DEBUIDO ,  UIRIAMU REZURIII GASURIII ,  FURANKU BENJIYAMIN KAAFUMAN ,  UIRIAMU JIYON PATORITSUKU ,  KENESU PAAKAA ROTSUDOBERU ,  ROBAATO UIRIAMU PASUKO ,  ANTON NENADEITSUKU

IPC: B24B37/00 ,  C09G1/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/48

Abstract: PURPOSE: To provide an allowable flat substrate surface by contacting a substrate which has etching speed different from that of specified etching liquid with a polishing pad and contacting that substrate with a slurry containing the etching liquid composed of abradant particles, chelate salt of transient metal and its solvent. CONSTITUTION: Concerning an electronic part substrate having two characteristics such as a ceramic substrate having metal bias, for example, having the etching speed different from that of specified etching liquid, this substrate is contacted with the polishing pad, contacted with the slurry containing the specified etching liquid, and planarized by chemical/mechanical polishing. This slurry is composed of the abradant particles, chelate salt of transient metal and solvent for this salt, the chelate salt of transient metal exerts chemical operation or etching operation upon the solvent, and the abradant particles exert mechanical operation in cooperation with the polishing pad. Thus, the substrate surface can be almost planarized.

公开(公告)号：JPS62102544A

公开(公告)日：1987-05-13

申请号：JP21990486

申请日：1986-09-19

Applicant: IBM

Inventor： MERANII MIN CHII CHIYOU ,  JIYON EDOWAADO KURONIN ,  UIRIAMU RESURII GASURII ,  KAATAA UERINGU KAANTA ,  BAABARA JIIN RUSAA ,  UIRIAMU JIYON PATORITSUKU ,  KIYASARIIN ARISU PERII ,  CHIYAARUZU RANBAATO SUTANDOREI

IPC: H01L21/3205 ,  H01L21/302 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/768 ,  H05K3/04 ,  H05K3/10 ,  H05K3/46

公开(公告)号：JPS62102543A

公开(公告)日：1987-05-13

申请号：JP21422486

申请日：1986-09-12

Applicant: IBM

Inventor： KURAUSU DEIITORITSUCHI BEIYAA ,  UIRIAMU RESURII GASURII ,  SUTANREE RICHIYAADO MAAKAREUIT ,  ERITSUKU MENDERU ,  UIRIAMU JIYON PATORITSUKU ,  KIYASARIIN ARISU PERII ,  UIRIAMU ARON PURISUKIN ,  YAKOBU RAIZUMAN ,  POORU MAACHIN SHIYAIBURU ,  CHIYAARUZU RANBAATO SUTANDOREI

IPC: H01L21/3205 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/3213 ,  H01L21/768