公开(公告)号：DE69618548T2

公开(公告)日：2002-09-12

申请号：DE69618548

申请日：1996-10-24

Applicant: IBM

Inventor： ARMACOST MICHAEL DAVID ,  DOBUZINSKY DAVID MARK ,  GAMBINO JEFFERY PETER ,  JASO MARK ANTHONY

IPC: H01L21/768 ,  H01L21/304 ,  H01L21/321 ,  H01L21/3105

Abstract: A method of forming interlevel studs in an insulating layer on a semiconductor wafer. First, a conformal BPSG layer is formed on a Front End of the Line (FEOL) semiconductor structure. Vias are opened through the BPSG layer to the FEOL structure. A layer of poly is formed (deposited) on the BPSG layer, filling the vias. The poly layer may be insitu doped poly or implanted after it is deposited. The wafer is annealed to diffuse dopant from the poly to form diffusions wherever the poly contacts the substrate. A non-selective slurry of colloidal silica and at least 1% ammonium hydroxide is used to chem-mech polish the poly from the BPSG layer and, simultaneously, planarize the BPSG layer.

公开(公告)号：DE69618548D1

公开(公告)日：2002-02-21

申请号：DE69618548

申请日：1996-10-24

Applicant: IBM

Inventor： ARMACOST MICHAEL DAVID ,  DOBUZINSKY DAVID MARK ,  GAMBINO JEFFERY PETER ,  JASO MARK ANTHONY

IPC: H01L21/768 ,  H01L21/304 ,  H01L21/321 ,  H01L21/3105

Abstract: A method of forming interlevel studs in an insulating layer on a semiconductor wafer. First, a conformal BPSG layer is formed on a Front End of the Line (FEOL) semiconductor structure. Vias are opened through the BPSG layer to the FEOL structure. A layer of poly is formed (deposited) on the BPSG layer, filling the vias. The poly layer may be insitu doped poly or implanted after it is deposited. The wafer is annealed to diffuse dopant from the poly to form diffusions wherever the poly contacts the substrate. A non-selective slurry of colloidal silica and at least 1% ammonium hydroxide is used to chem-mech polish the poly from the BPSG layer and, simultaneously, planarize the BPSG layer.