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    1.
    发明专利
    未知

    公开(公告)号：DE1621473A1

    公开(公告)日：1970-07-23

    申请号：DE1621473

    申请日：1967-05-12

    Applicant: IBM

    Inventor： REGH JOSEPH ,  ROBERT GARDINER JAMES ,  AVONNE SILVEY GENE

    IPC: B24B37/04 ,  H01L21/20 ,  H01L21/288 ,  H01L21/306 ,  C23C17/02

    Abstract: 1,168,536. Semi-conductor treatment. INTERNATIONAL BUSINESS MACHINES CORP. 20 April, 1967 [12 May, 1966], No. 18166/67. Heading H1K. [Also in Division C1] Semi-conductor devices are prepared by epitaxial growth on wafers having planar silicon surfaces. The planar silicon surfaces are obtained by plating a silicon surface and polishing to remove plated metal from high points on the silicon surface (see C1 Division, abridgment). The planar silicon surfaces may be their either etched with hydrogen chloride vapour in hydrogen, or subjected to a hydrogen bake, and then a silicon-arsenic doped epitaxial layer is deposited on the surfaces. The resultant wafer is then Seitl-etched and a stacking fault count recorded.

    2.
    发明专利
    未知

    公开(公告)号：DE1521337A1

    公开(公告)日：1969-07-31

    申请号：DE1521337

    申请日：1966-10-07

    Applicant: IBM

    Inventor： YOUNG DOO VEN ,  RAY NICHOLS DONALD ,  AVONNE SILVEY GENE

    IPC: C23C16/34 ,  H01L21/00 ,  H01L21/318 ,  H01L23/29

    Abstract: 1,153,794. Silicon nitride films. INTERNATIONAL BUSINESS MACHINES CORP. 7 Oct., 1966 [11 Oct., 1965], No. 44808/66. Heading C1A. [Also in Division H1] A method of depositing a film of Si 3 N 4 on a substrate comprises supporting the substrate in a reaction zone, introducing into the zone and across the substrate surface a mixture of SiH 4 , N2 or a gaseous compound of nitrogen such as NH 3 , and sufficient H 2 carrier gas to slow down the reaction, heating the substrate to above 500‹ C., whereby a pin-hole free film of Si 3 N 4 is pyrolytically formed on the surface of the substrate. The substrate, which may be Si, Ge, SiO 2 , or graphite, is preferably heated to 700‹ to 1100‹ C. by RF heating.

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