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    1.
    发明专利
    未知

    公开(公告)号：DE1944131A1

    公开(公告)日：1970-03-19

    申请号：DE1944131

    申请日：1969-08-30

    Applicant: IBM

    Inventor： YOUNG DOO VEN ,  SPIRO ANDREA

    IPC: H01L21/00 ,  H01L21/322 ,  H01L21/74 ,  H01L23/29 ,  H01L23/544 ,  H01L7/36

    Abstract: 1,271,815. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORP. 8 Sept., 1969 [9 Sept., 1968], No. 44314/69. Heading H1K. In the manufacture of a semi-conductor device a diffusion mask is removed from the surface of the semi-conductor body after a diffusion step and a surface layer of the body then removed before the growth of an epitaxial layer. Removal of the surface layer is necessary since the high temperatures used in the diffusion process give rise to a high dislocation density which makes the surface unsuitable as a substrate for good epitaxial growth. In the manufacture of silicon devices, silicon dioxide may be used as the diffusion mask. This is removed by a selective etch and semi-conductor material then removed by oxidation of the surface and further selective etching. With germanium and gallium arsenide, which are not easily oxidizable, direct removal of semi-conductor is effected by chemical or electrolytic etching. A process is described in which a silicon dioxide mask is formed on a psilicon substrate by a process involving dry oxidation, " wet " oxidation, and then dry oxidation, the oxide layer being apertured in the usual way. The exposed semiconductor is then slightly recessed, by etching, to provide a visual mark for orientating further masks in later processing and an n + zone formed by arsenic diffusion from silicon-arsenic powder. The silicon dioxide is etched off, the surface re-oxidized, and the new oxide also etched off. An n type layer is then grown epitaxially over the whole surface and the structure subjected to further diffusions to make a transistor.

    2.
    发明专利
    未知

    公开(公告)号：DE1521337A1

    公开(公告)日：1969-07-31

    申请号：DE1521337

    申请日：1966-10-07

    Applicant: IBM

    Inventor： YOUNG DOO VEN ,  RAY NICHOLS DONALD ,  AVONNE SILVEY GENE

    IPC: C23C16/34 ,  H01L21/00 ,  H01L21/318 ,  H01L23/29

    Abstract: 1,153,794. Silicon nitride films. INTERNATIONAL BUSINESS MACHINES CORP. 7 Oct., 1966 [11 Oct., 1965], No. 44808/66. Heading C1A. [Also in Division H1] A method of depositing a film of Si 3 N 4 on a substrate comprises supporting the substrate in a reaction zone, introducing into the zone and across the substrate surface a mixture of SiH 4 , N2 or a gaseous compound of nitrogen such as NH 3 , and sufficient H 2 carrier gas to slow down the reaction, heating the substrate to above 500‹ C., whereby a pin-hole free film of Si 3 N 4 is pyrolytically formed on the surface of the substrate. The substrate, which may be Si, Ge, SiO 2 , or graphite, is preferably heated to 700‹ to 1100‹ C. by RF heating.

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