公开(公告)号：DE2609087A1

公开(公告)日：1976-12-30

申请号：DE2609087

申请日：1976-03-05

Applicant: IBM

Inventor： BAGLIN JOHN EDWARD ,  DISTEFANO THOMAS HERMAN ,  TU KING-NING

IPC: H01L21/265 ,  C03C23/00 ,  H01L21/28 ,  H01L21/3115 ,  H01L21/316 ,  H01L29/51 ,  C03C21/00

Abstract: 1519695 Densifying glass INTERNATIONAL BUSINESS MACHINES CORP 5 March 1976 [11 June 1975] 08844/76 Heading C1M [Also in Division H1] The dielectric breakdown strength of a vitreous insulating layer less than 105000 Š thick of an electronic device is increased by irradiating the layer, during or after its formation, with ions of H, He, Ne, Ar, Kr or Xe at a dosage and energy so as to increase the density of the layer by at least 1% without the ions penetrating completely the layer, and then annealing the layer. The vitreous layer may be fused SiO 2 on a substrate of, e.g., silicon. The device 30-1 comprising the vitreous layer may be mounted on plate 30-2 in mounts 30-3. Ions from source 12 are passed through accelerator 14, then through a momentum analyzing magnet 16 and beam scanner plates 18-1, 18-2, 20-1, 20-2, and directed on to the vitreous layer (e.g. at a dosage of 10 13 -10 17 ions/cm 2 .). The annealing, which may be concurrent with the irradiation may be at 200-800‹ C.