公开(公告)号：CA2162189C

公开(公告)日：2003-08-12

申请号：CA2162189

申请日：1995-11-06

Applicant: IBM

Inventor： COHEN STEPHAN ALAN ,  MCGAHAY VINCENT JAMES ,  UTTECHT RONALD ROBERT ,  BALLANCE DAVID S

IPC: H01L21/768 ,  H01L21/316 ,  H01L21/762 ,  H01L23/522 ,  H01L23/532 ,  H01L27/07 ,  H01L23/29

Abstract: An insulator for covering an interconnection wiring level in a surface there of on a semiconductor substrate containing semiconductor devices formed by curing a flowable oxide layer and annealing. The annealing is carried out in the presence of hydroge n and aluminum to obtain a dielectric constant of the oxide layer to a value below 3.2. Als o provided is electrical insulation between neighboring devices using the flowable oxide w hich is cured and annealed. In this case, the annealing can be carried out in hydrogen with or without the presence of aluminum.