公开(公告)号：EP0715354A3

公开(公告)日：1998-07-15

申请号：EP95117118

申请日：1995-10-31

Applicant: IBM

Inventor： COHEN STEPHAN ALAN ,  MCGAHAY VINCENT JAMES ,  UTTECHT RONALD ROBERT

IPC: H01L21/768 ,  H01L21/316 ,  H01L21/762 ,  H01L23/522 ,  H01L23/532 ,  H01L21/76

CPC classification number: H01L23/5329 ,  H01L21/76224 ,  H01L23/5222 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An insulator for covering an interconnection wiring level (3) in a surface thereof on a semiconductor substrate containing semiconductor devices formed by curing a flowable oxide layer (1) and annealing. The annealing is carried out in the presence of hydrogen and aluminum to obtain a dielectric constant of the oxide layer to a value below 3.2.
Also provided is electrical insulation between neighboring devices using the flowable oxide (1) which is cured and annealed. In this case, the annealing can be carried out in hydrogen with or without the presence of aluminum.

公开(公告)号：CA2162189A1

公开(公告)日：1996-05-29

申请号：CA2162189

申请日：1995-11-06

Applicant: IBM

Inventor： COHEN STEPHAN ALAN ,  MCGAHAY VINCENT JAMES ,  UTTECHT RONALD ROBERT

IPC: H01L21/768 ,  H01L21/316 ,  H01L21/762 ,  H01L23/522 ,  H01L23/532 ,  H01L27/07 ,  H01L23/29

Abstract: An insulator for covering an interconnection wiring level in a surface thereof on a semiconductor substrate containing semiconductor devices formed by curing a flowable oxide layer and annealing. The annealing is carried out in the presence of hydrogen and aluminum to obtain a dielectric constant of the oxide layer to a value below 3.2. Also provided is electrical insulation between neighboring devices using the flowable oxide which is cured and annealed. In this case, the annealing can be carried out in hydrogen with or without the presence of aluminum.

公开(公告)号：CA2162189C

公开(公告)日：2003-08-12

申请号：CA2162189

申请日：1995-11-06

Applicant: IBM

Inventor： COHEN STEPHAN ALAN ,  MCGAHAY VINCENT JAMES ,  UTTECHT RONALD ROBERT ,  BALLANCE DAVID S

IPC: H01L21/768 ,  H01L21/316 ,  H01L21/762 ,  H01L23/522 ,  H01L23/532 ,  H01L27/07 ,  H01L23/29

Abstract: An insulator for covering an interconnection wiring level in a surface there of on a semiconductor substrate containing semiconductor devices formed by curing a flowable oxide layer and annealing. The annealing is carried out in the presence of hydroge n and aluminum to obtain a dielectric constant of the oxide layer to a value below 3.2. Als o provided is electrical insulation between neighboring devices using the flowable oxide w hich is cured and annealed. In this case, the annealing can be carried out in hydrogen with or without the presence of aluminum.