公开(公告)号：EP0715354A3

公开(公告)日：1998-07-15

申请号：EP95117118

申请日：1995-10-31

Applicant: IBM

Inventor： COHEN STEPHAN ALAN ,  MCGAHAY VINCENT JAMES ,  UTTECHT RONALD ROBERT

IPC: H01L21/768 ,  H01L21/316 ,  H01L21/762 ,  H01L23/522 ,  H01L23/532 ,  H01L21/76

CPC classification number: H01L23/5329 ,  H01L21/76224 ,  H01L23/5222 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An insulator for covering an interconnection wiring level (3) in a surface thereof on a semiconductor substrate containing semiconductor devices formed by curing a flowable oxide layer (1) and annealing. The annealing is carried out in the presence of hydrogen and aluminum to obtain a dielectric constant of the oxide layer to a value below 3.2.
Also provided is electrical insulation between neighboring devices using the flowable oxide (1) which is cured and annealed. In this case, the annealing can be carried out in hydrogen with or without the presence of aluminum.

公开(公告)号：JPH08213461A

公开(公告)日：1996-08-20

申请号：JP30098895

申请日：1995-11-20

Applicant: IBM

Inventor： COHEN STEPHEN ALAN ,  MCGAHAY VINCENT JAMES ,  UTTECHT RONALD ROBERT

IPC: H01L21/768 ,  H01L21/316 ,  H01L21/762 ,  H01L23/522 ,  H01L23/532 ,  H01L21/324

Abstract: PROBLEM TO BE SOLVED: To obtain insulator having low permitivity and gap filling capability, by annealing a curing flowable oxide layer in an atmosphere of hydrogen and aluminum, diffusing hydrogen in the flowable oxide layer, and specifying the permittivity. SOLUTION: This insulator is used for covering interconnection wiring level 3 in the semiconductor substrate surface containing a semiconductor device, provided with a first flowable oxide layer 1 for covering the interconnection wiring level 3, and cures the oxide layer 1. The flowable oxide layer 1 is annealed in an atmosphere of hydrogen and aluminum. Hydrogen is diffused in the flowable oxide layer 1, and its permitivity is reduced to be less than 3.2. As the flowable oxide layer 1, cured hydrogensilsesquioxane is contained. Thereby special insulator having comparatively low permitivity less than 3.2 and excellent gap filling capability can be obtained.

公开(公告)号：CA2162189A1

公开(公告)日：1996-05-29

申请号：CA2162189

申请日：1995-11-06

Applicant: IBM

Inventor： COHEN STEPHAN ALAN ,  MCGAHAY VINCENT JAMES ,  UTTECHT RONALD ROBERT

IPC: H01L21/768 ,  H01L21/316 ,  H01L21/762 ,  H01L23/522 ,  H01L23/532 ,  H01L27/07 ,  H01L23/29

Abstract: An insulator for covering an interconnection wiring level in a surface thereof on a semiconductor substrate containing semiconductor devices formed by curing a flowable oxide layer and annealing. The annealing is carried out in the presence of hydrogen and aluminum to obtain a dielectric constant of the oxide layer to a value below 3.2. Also provided is electrical insulation between neighboring devices using the flowable oxide which is cured and annealed. In this case, the annealing can be carried out in hydrogen with or without the presence of aluminum.

公开(公告)号：GB2345790A

公开(公告)日：2000-07-19

申请号：GB9927378

申请日：1999-11-22

Applicant: IBM

Inventor： MCGAHAY VINCENT JAMES ,  IVERS THOMAS HENRY ,  NYE HENRY ,  LIU JOYCE

IPC: H01L21/3205 ,  H01L21/28 ,  H01L21/768 ,  H01L23/52 ,  H01L23/532

Abstract: Poorly adherent layers 5 such as silicon nitride and silicon dioxide exhibit improved adhesion to a copper member 1 by providing an intervening germanium-containing layer 3. The germanium-containing layer is copper germanide, germanium oxide, germanium nitride or combinations thereof. The germanium-containing layer enhances the adhesion such that the poorly adherent layer is less susceptible to delamination from the copper member.

公开(公告)号：GB2345790B

公开(公告)日：2003-12-10

申请号：GB9927378

申请日：1999-11-22

Applicant: IBM

Inventor： MCGAHAY VINCENT JAMES ,  IVERS THOMAS HENRY ,  NYE HENRY ,  LIU JOYCE C

IPC: H01L21/3205 ,  H01L21/28 ,  H01L21/768 ,  H01L23/52 ,  H01L23/532

Abstract: Poorly adherent layers such as silicon nitride and silicon dioxide exhibit improved adhesion to copper member by providing an intervening germanium-containing layer. The germanium-containing layer is copper germanide, germanium oxide, germanium nitride or combinations thereof. The germanium-containing layer enhances the adhesion such that the poorly adherent layer is less susceptible to delamination from the copper member.

公开(公告)号：CA2162189C

公开(公告)日：2003-08-12

申请号：CA2162189

申请日：1995-11-06

Applicant: IBM

Inventor： COHEN STEPHAN ALAN ,  MCGAHAY VINCENT JAMES ,  UTTECHT RONALD ROBERT ,  BALLANCE DAVID S

IPC: H01L21/768 ,  H01L21/316 ,  H01L21/762 ,  H01L23/522 ,  H01L23/532 ,  H01L27/07 ,  H01L23/29

Abstract: An insulator for covering an interconnection wiring level in a surface there of on a semiconductor substrate containing semiconductor devices formed by curing a flowable oxide layer and annealing. The annealing is carried out in the presence of hydroge n and aluminum to obtain a dielectric constant of the oxide layer to a value below 3.2. Als o provided is electrical insulation between neighboring devices using the flowable oxide w hich is cured and annealed. In this case, the annealing can be carried out in hydrogen with or without the presence of aluminum.

公开(公告)号：GB2365215A

公开(公告)日：2002-02-13

申请号：GB0101254

申请日：2001-01-18

Applicant: IBM

Inventor： MCGAHAY VINCENT JAMES ,  LEVINE ERNEST

IPC: H01L21/3205 ,  H01L21/283 ,  H01L21/316 ,  H01L21/768 ,  H01L23/52 ,  H01L23/532 ,  H01L21/02

Abstract: A composite diffusion barrier (26,28) protects copper structure (30) from oxidation in the presence of oxygen or water in an integrated circuit. The copper structure (30) may be a dual damascene conductor with conductor (32) and via portions (34). The composite barrier includes dense diffusion barrier (28), which may be made of tantalum and/or tantalum nitride, and barrier film (26) capable of forming a protective oxide in a self limiting manner in the presence of oxygen or water. Oxidation of barrier film (26) enables in-situ repair of defects such as pinholes in the diffusion barrier (28). The barrier film (26) may contain aluminium, silicon or Cu 3 Ge. The composite barrier (26,28) is situated in a semiconductor device, which includes an insulator layer (20), which may have low dielectric constant k and high permeability. The device may also have nitride cap (38).