公开(公告)号：US3886569A

公开(公告)日：1975-05-27

申请号：US34623773

申请日：1973-03-29

Applicant: IBM

Inventor： BASI JAGTAR S ,  SANDHU JAGTAR S

IPC: H01L21/00 ,  H01L21/225 ,  H01L21/316 ,  H01L7/00

CPC classification number: H01L21/31625 ,  H01L21/00 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/2255 ,  Y10S148/015 ,  Y10S148/043 ,  Y10S148/085 ,  Y10S148/145 ,  Y10S148/151

Abstract: A simultaneous double diffusion method wherein a coating containing a silicon oxide and the oxides of a plurality of conductivity-determining impurities having different diffusivity rates is formed on the surface of a semiconductor substrate using a temperature at which substantially no diffusion of the impurities into the substrate will take place. Then, the substrate is heated to simultaneously diffuse the impurities into the substrate to form a plurality of abutting regions in the substrate separated by junctions. The sequence of regions in distance, with respect to the substrate surface, is controlled by the diffusivity rates of the selected conductivity-determining impurities. The coating may be a single layer or a plurality of layers, at least two of which contain different conductivitydetermining impurities.

公开(公告)号：CA1071511A

公开(公告)日：1980-02-12

申请号：CA267072

申请日：1976-12-03

Applicant: IBM

Inventor： BASI JAGTAR S

IPC: B24B37/00 ,  C09G1/02 ,  H01L21/304 ,  H01L21/306 ,  H01L29/14 ,  H01L29/04 ,  B01J17/00

Abstract: SILICON WAFER POLISHING The polishing of monocrystalline silicon wafers with an aqueous composition of fine sized abrasive particles, a soluble alkali metal base such as sodium carbonate and an oxidizing agent such as sodium or potassium salt of dichloroisocyanuric acid (e.g. salts of halo-trizenetrione).

公开(公告)号：FR2333847A1

公开(公告)日：1977-07-01

申请号：FR7631440

申请日：1976-10-11

Applicant: IBM

Inventor： BASI JAGTAR S

IPC: B24B37/00 ,  C09G1/02 ,  H01L21/304 ,  H01L21/306 ,  C09K13/02 ,  H01L21/302

Abstract: The polishing of monocrystalline silicon wafers with an aqueous composition of fine sized abrasive particles, a soluble alkali metal base such a sodium carbonate and an oxidizing agent such as sodium or potassium salt of dichloroisocyanuric acid (e.g., salts of halo-trizenetrione).

公开(公告)号：FR2345532A1

公开(公告)日：1977-10-21

申请号：FR7703512

申请日：1977-02-01

Applicant: IBM

Inventor： BASI JAGTAR S

IPC: H01L21/308 ,  H01L21/306 ,  C23G1/02

Abstract: The invention comprehends establishing a hydrophilic surface on polished semiconductor wafers, such as silicon, after polishing (e.g. silica polishing) by oxidation and hydrolysis of the wafer surface for conditioning thereof for post-polishing cleaning.

公开(公告)号：CA1106611A

公开(公告)日：1981-08-11

申请号：CA331675

申请日：1979-07-12

Applicant: IBM

Inventor： BASI JAGTAR S ,  LYONS VINCENT J ,  MENDEL ERIC

IPC: B24B37/00 ,  B24D13/14 ,  B24B29/00

Abstract: PROCESS AND APPARATUS FOR FREE POLISHING Opposite faces of a workpiece, such as a semiconductor wafer, are simultaneously free polished by contacting the faces with a pair of rotating polishing pads to which are fed a polishing slurry of an abrasive material. A pattern of perforations is provided in the surface of at least one of the pads such that the area of pad in contact with the opposite faces of the workpiece is different. FI 9-78-031

公开(公告)号：CA1037364A

公开(公告)日：1978-08-29

申请号：CA213579

申请日：1974-11-13

Applicant: IBM

Inventor： BASI JAGTAR S

IPC: C23F3/00 ,  C23F3/03 ,  H01L21/304 ,  H01L21/306 ,  C11D7/02 ,  C09G1/18

Abstract: SILICON POLISHING SOLUTION PREPARATION An improved process for preparing a polishing solution for use in the chemical-mechanical polishing of silicon comprising copper nitrate, ammonium fluoride, nitric acid and ammonium nitrate. The latter two components are added to the copper nitrate, the system mixed well and then the ammonium fluoride added. The process eliminates the need for settling, decantation or filtration during solution preparation and permits substantially lowered amounts of copper nitrate to be used for silicon polishing. The silicon polishing solution is also described.

公开(公告)号：CA980919A

公开(公告)日：1975-12-30

申请号：CA169274

申请日：1973-04-13

Applicant: IBM

Inventor： BASI JAGTAR S ,  HULL EDWARD M

IPC: H01L21/308 ,  C30B29/42 ,  H01L21/316 ,  H01L23/31

Abstract: A process for the protecton of gallium arsenide surfaces comprises treating the surface with sodium oxychloride solution to form an interim protective film and subsequently removing the protective film utilizing sodium oxychloride and sodium carbonate prior to further processing.

公开(公告)号：CA1053382A

公开(公告)日：1979-04-24

申请号：CA272855

申请日：1977-02-28

Applicant: IBM

Inventor： BASI JAGTAR S

IPC: H01L21/308 ,  H01L21/306 ,  H01L21/70 ,  C03C23/00

Abstract: SURFACE TREATMENT OF SEMICONDUCTOR SUBSTRATES The invention comprehends establishing a hydrophilic surface on polished semiconductor wafers, such as silicon, after polishing (e.g. silica polishing) by oxidation and hydrolysis of the wafer surface for conditioning thereof for post-polishing cleaning.

公开(公告)号：FR2391830A1

公开(公告)日：1978-12-22

申请号：FR7811798

申请日：1978-04-14

Applicant: IBM

Inventor： BASI JAGTAR S

IPC: H01L21/308 ,  H01L21/304 ,  H01L21/306 ,  B28D5/06 ,  C09K13/00

公开(公告)号：FR2354022A5

公开(公告)日：1977-12-30

申请号：FR7235068

申请日：1972-09-27

Applicant: IBM

Inventor： BASI JAGTAR S

IPC: H01L21/306 ,  H01L21/308 ,  B24B37/00 ,  B28D5/06 ,  H01L19/00

Abstract: An improved method for polishing gallium phosphide planar surfaces is disclosed comprising positioning gallium phosphide wafers or slices in close adjacency to a polishing medium providing a relative motion between said wafer and polishing medium while providing a controlled predetermined flow of OBr ions to said wafers and polishing medium and continuing the relative motion until the wafer surface is polished to a smooth and featureless condition whereupon the wafers are washed and removed from the polishing mechanism.