公开(公告)号：US3607135A

公开(公告)日：1971-09-21

申请号：US3607135D

申请日：1967-10-12

Applicant: IBM

Inventor： GERETH REINHARD K ,  HULL EDWARD M ,  LIGHT THOMAS B

IPC: B01D3/10 ,  B01D7/00 ,  C01B29/00

CPC classification number: B01D3/10 ,  Y10S148/056

Abstract: A process and apparatus for producing thick films of a material, containing a number of constituents such as compounds, physical mixtures and alloys of material, by flash evaporation is described. Specifically, high feed rates of the material, gallium arsenide, for example, to be flash evaporated are required for depositing uniform, thick films on a substrate and such high feed rates are made possible by preventing clogging of the feed apparatus by the feed materials. Clogging is prevented by the use of a guide funnel and guide tube arrangement which are disposed one above the other in coaxial vertical alignment with an aperture in a box source heater, the lower extremity of the guide tube is vertically displaced from the aperture a distance sufficient to maintain the temperature of the guide tube below the decomposition or melting temperature of the material but at a temperature in excess of the condensation temperature of the more volatile constituent of the material being evaporated; arsenic in the instance where gallium arsenide is being evaporated.

公开(公告)号：US3179541A

公开(公告)日：1965-04-20

申请号：US24852062

申请日：1962-12-31

Applicant: IBM

Inventor： HULL EDWARD M ,  LYONS VINCENT J

IPC: H01L21/205

CPC classification number: H01L21/0262 ,  H01L21/02546 ,  H01L21/02581

公开(公告)号：CA980919A

公开(公告)日：1975-12-30

申请号：CA169274

申请日：1973-04-13

Applicant: IBM

Inventor： BASI JAGTAR S ,  HULL EDWARD M

IPC: H01L21/308 ,  C30B29/42 ,  H01L21/316 ,  H01L23/31

Abstract: A process for the protecton of gallium arsenide surfaces comprises treating the surface with sodium oxychloride solution to form an interim protective film and subsequently removing the protective film utilizing sodium oxychloride and sodium carbonate prior to further processing.

公开(公告)号：CA770084A

公开(公告)日：1967-10-24

申请号：CA770084D

Applicant: IBM

Inventor： LYONS VINCENT J ,  HULL EDWARD M

公开(公告)号：FR2289050A1

公开(公告)日：1976-05-21

申请号：FR7526334

申请日：1975-08-19

Applicant: IBM

Inventor： ABOAF JOSEPH A ,  BROADIE ROBERT W ,  HULL EDWARD M ,  POGGE HANS B

IPC: H01L21/3063 ,  H01L21/223 ,  H01L21/306 ,  H01L21/316 ,  H01L21/331 ,  H01L29/04 ,  H01L29/08 ,  H01L29/73 ,  H01L21/18 ,  H01L29/36 ,  H01L29/68

Abstract: A high power semiconductor device is formed by providing a semiconductor substrate of N conductivity, rendering the backside of same porous as by subjecting same to anodic treatment carried out in a concentrated solution of hydrofluoric acid, converting the porous region to an N region, as by arsenic diffusion and forming an active device by conventional techniques in the top surface of the substrate. The method permits usage of high quality N substrates and at the same time eliminates the requirement of growing thick epitaxial layers.