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公开(公告)号：JPH11288585A
公开(公告)日：1999-10-19
申请号：JP2625899
申请日：1999-02-03
Applicant: IBM
IPC: G01R33/09 , G11B5/39 , G11C11/15 , G11C11/16 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/08
Abstract: PROBLEM TO BE SOLVED: To make an electric interaction generate only at a favorable part by allowing a first magnetic layer to be changable to one side of two kinds of magnetic states opposing along its axis and allowing the favorable part of the first magnetic layer to place its center around the center point of the axis. SOLUTION: In a magnetic tunnel junction device 109, a tunnel is ristricted in the favorable one part of a free magnetic region 124 by using a smaller tunnel region 122 and the size of a reference magnetic region 120 is made to be the same as that of the tunnel region 122. Insulation regions 1301 , 1302 preventing electric tunnels due to remaining parts of the layer 124 existing at the outside of the favorable part are used in an adjacent relation with the tunnel region 122 and the reference region 120 in order to prevent interactions in areas existing at the outside of the favorable part of the free magnetic region 124. Thus, tunnels along arbitrary axes of the free region are also restricted similarly in order to restrict the tunnel at the favorable part which although exists at the arbitrary position of the free region.
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公开(公告)号：DE69923244T2
公开(公告)日：2006-01-12
申请号：DE69923244
申请日：1999-02-04
Applicant: IBM
IPC: G01R33/09 , G11B5/39 , G11C11/15 , G11C11/16 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/08
Abstract: Magnetoresistive devices are disclosed which include a changeable magnetic region within which at least two magnetic states can be imposed. Upon magnetoresistive electrical interaction with the device, the relative orientation of the magnetic states of the changeable magnetic region, and a proximate reference magnetic region, can be sensed thereby providing a binary data storage capability. The present invention limits the electrical interaction to only a preferred portion of the changeable magnetic region, e.g., the portion within which the two magnetic states can be dependably predicted to be substantially uniform, and opposite of one another. Structures for limiting the electrical interaction to this preferred portion of the changeable magnetic region are disclosed, and include smaller interaction regions, and alternating areas of insulation and conductive, interaction regions, disposed proximate the changeable magnetic region. The principles of the present invention can be applied to magnetic random access memory ("MRAM") arrays, which employ giant magnetoresistive ("GMR") cells, or magnetic tunnel junction ("MTJ") cells, at the intersections of bitlines and wordlines, and also to magnetic sensors such as magnetic data storage devices having access elements used to access data on a magnetic data storage medium.
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公开(公告)号：DE69923244D1
公开(公告)日：2005-02-24
申请号：DE69923244
申请日：1999-02-04
Applicant: IBM
IPC: G01R33/09 , G11B5/39 , G11C11/15 , G11C11/16 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/08
Abstract: Magnetoresistive devices are disclosed which include a changeable magnetic region within which at least two magnetic states can be imposed. Upon magnetoresistive electrical interaction with the device, the relative orientation of the magnetic states of the changeable magnetic region, and a proximate reference magnetic region, can be sensed thereby providing a binary data storage capability. The present invention limits the electrical interaction to only a preferred portion of the changeable magnetic region, e.g., the portion within which the two magnetic states can be dependably predicted to be substantially uniform, and opposite of one another. Structures for limiting the electrical interaction to this preferred portion of the changeable magnetic region are disclosed, and include smaller interaction regions, and alternating areas of insulation and conductive, interaction regions, disposed proximate the changeable magnetic region. The principles of the present invention can be applied to magnetic random access memory ("MRAM") arrays, which employ giant magnetoresistive ("GMR") cells, or magnetic tunnel junction ("MTJ") cells, at the intersections of bitlines and wordlines, and also to magnetic sensors such as magnetic data storage devices having access elements used to access data on a magnetic data storage medium.
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