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公开(公告)号：EP1514274A4
公开(公告)日：2008-04-02
申请号：EP02807323
申请日：2002-11-15
Applicant: IBM
Inventor： ABRAHAM DAVID WILLIAM , TROUILLOUD PHILIP LOUIS
IPC: G11C11/15 , G11C7/04 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L43/08 , G11C11/18 , G11C7/02 , G11C11/00
CPC classification number: H01L27/222 , G11C7/04 , G11C11/16 , G11C11/1675 , H01L43/10
Abstract: A memory storage device is provided that includes a storage cell having a changeable magnetic region. The changeable magnetic region (20) includes a material having a magnetization state that is responsive to a change in temperature. The memory storage device also includes a heating element. The heating element is proximate to the storage cell for selectively changing the temperature of the changeable magnetic region of said storage cell. By heating the storage cell (50) via the heating element, as opposed to heating the storage cell by directly applying current thereto, more flexibility is provided in the manufacture of the storage cells.
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2.发明专利
公开(公告)号：JPH11273336A
公开(公告)日：1999-10-08
申请号：JP2400399
申请日：1999-02-01
Inventor： ABRAHAM DAVID WILLIAM , TROUILLOUD PHILIP LOUIS
IPC: G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L43/08
CPC classification number: G11C11/16
Abstract: PROBLEM TO BE SOLVED: To obtain a magnetic device which uses applied magnetic write stimula tion and includes a variable magnetic area where two kinds of magnetic state can be imposed in stimulation. SOLUTION: When electricity passes through the device 109 thereafter, the opposite alignment of the magnetic states of the variable magnetic area and the closest reference magnetic area can be sensed and then binary storing capability is obtained. This method limits the magnetic write stimulation to only some preferable part of the variable magnetic area, e.g. the part where two kinds of magnetic state can securely be written so that they are opposite to each other. The magnetic write stimulation is limited to some preferable part of the variable magnetic area by forming a thin and long structure so that a bit line 105 or word line 103 relating to the application of the magnetic stimulation is made narrow or its longitudinal size is larger than the lateral sizes of one or both of the word line 103 and bit line 105. This principle is applicable to a magnetic random access(MRAM) array using a magnetic tunnel junction(MTJ) cell at the intersection of the bit line 105 and word line 103.
Abstract translation: 要解决的问题：获得使用施加磁写入激励的磁性装置，并且包括可以在刺激中施加两种磁状态的可变磁场。 解决方案：此后，当电通过装置109时，可以感测到可变磁场和最接近的参考磁场的磁状态的相反对准，然后获得二进制存储能力。 该方法将磁写入刺激限制在可变磁区的一些优选部分，例如， 可以安全地写入两种磁状态使得它们彼此相对的部分。 通过形成薄且长的结构，磁写入刺激被限制在可变磁场的一些优选部分，使得与施加磁刺激有关的位线105或字线103变窄或者其纵向尺寸大于 字线103和位线105之一或两者的横向尺寸。该原理适用于在位线105和字线交叉处使用磁性隧道结（MTJ）单元的磁随机存取（MRAM）阵列 103。
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公开(公告)号：JPH11273337A
公开(公告)日：1999-10-08
申请号：JP2634499
申请日：1999-02-03
IPC: G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/08
CPC classification number: H01L27/224 , G11C11/15 , G11C11/16
Abstract: PROBLEM TO BE SOLVED: To obtain a magnetic memory which has a 1st and a 2nd crossing conductor forming an intersection area. SOLUTION: The magnetic memory cell 642 includes a variable magnetic area having a magnetic axis given two magnetization direction along itself, and consequently two kinds of state that the cell can change into according to electricity applied thereto and the resulting magnetic stimulation are provided. In order to enable the predictable development of a magnetic pattern from the 1st direction to the 2nd direction, the asymmetry of the magnetic stimulation applied to the cell while some state is written thereto is disclosed. Further, the layout of the cell or the physical asymmetry of magnetism which enables the predictable development of the pattern are also disclosed. This principle is applicable to a magnetic random access memory(MRAM) array using a magnetic tunneling junction cell at the intersection of a bit line and a word line supplying electricity and the resulting magnetic stimulation so as to write the cell therein.
Abstract translation: 要解决的问题：获得具有形成交叉区域的第一和第二交叉导体的磁性存储器。 解决方案：磁存储单元642包括具有沿其自身给定两个磁化方向的磁轴的可变磁区，并且因此提供了根据施加到其上的电池可以改变的两种状态，并且提供了所得到的磁刺激。 为了实现从第1方向到第2方向的磁性图案的可预测的发展，公开了一些状态被写入时施加到单元的磁刺激的不对称性。 此外，还公开了能够预测图案的发展的单元的布局或磁性的物理不对称性。 该原理适用于在位线和提供电力的字线的交叉处使用磁性隧道结单元的磁性随机存取存储器（MRAM）阵列和所产生的磁刺激，以便在其中写入单元。
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公开(公告)号：JPH11317071A
公开(公告)日：1999-11-16
申请号：JP2629199
申请日：1999-02-03
Applicant: IBM
IPC: G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/08
Abstract: PROBLEM TO BE SOLVED: To improve the quality and the uniformity of responses with respect to an applied magnetic write stimulation by providing at least magnetic tunnel junctions which are operatable by using at least one electrode and which are simultaneously writable so as to be in an averaged state in acordance with magnetic stimulation applied to them by first and second electrodes. SOLUTION: A magnetic memory cell 109 consisting of magnetic tunnel junctions 108a, 108b is provided between conductors 103, 105. The magnetic tunnel junctions 108a, 108b include reference areas 120a, 120b, tunnel areas 122a, 122b and free areas 124a, 124b. Writing of the magnetic cell 109 is executed by changing magnetization directions being in the free areas 124a, 124b in accordance with electric signal applied by the conductors 103, 105, or resultingly a magnetic stimulation. An effective operation window of an electric and resulting magnetic stimulations can be obtained in the whole areas of an array by the averaged response of the magnetic tunnel junctions 108a, 108b.
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公开(公告)号：JPH11288585A
公开(公告)日：1999-10-19
申请号：JP2625899
申请日：1999-02-03
Applicant: IBM
IPC: G01R33/09 , G11B5/39 , G11C11/15 , G11C11/16 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/08
Abstract: PROBLEM TO BE SOLVED: To make an electric interaction generate only at a favorable part by allowing a first magnetic layer to be changable to one side of two kinds of magnetic states opposing along its axis and allowing the favorable part of the first magnetic layer to place its center around the center point of the axis. SOLUTION: In a magnetic tunnel junction device 109, a tunnel is ristricted in the favorable one part of a free magnetic region 124 by using a smaller tunnel region 122 and the size of a reference magnetic region 120 is made to be the same as that of the tunnel region 122. Insulation regions 1301 , 1302 preventing electric tunnels due to remaining parts of the layer 124 existing at the outside of the favorable part are used in an adjacent relation with the tunnel region 122 and the reference region 120 in order to prevent interactions in areas existing at the outside of the favorable part of the free magnetic region 124. Thus, tunnels along arbitrary axes of the free region are also restricted similarly in order to restrict the tunnel at the favorable part which although exists at the arbitrary position of the free region.
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Patent Agency Ranking
公开(公告)号：CA2481583C
公开(公告)日：2007-01-02
申请号：CA2481583
申请日：2002-11-15
Applicant: IBM
Inventor： TROUILLOUD PHILIP LOUIS , ABRAHAM DAVID WILLIAM
IPC: G11C11/15 , G11C11/18 , G11C7/02 , G11C7/04 , G11C11/00 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L43/08
Abstract: A memory storage device is provided that includes a storage cell having a changeable magnetic region. The changeable magnetic region includes a material having a magnetization state that is responsive to a change in temperature. The memory storage device also includes a heating element. The heating element is proximate to the storage cell for selectively changing the temperature of the changeable magnetic region of said storage cell. By heating the storage cell via the heating element, as opposed to heating the storage cell by directly applying current thereto, more flexibility is provided in the manufacture of the storage cells.
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公开(公告)号：DE60237476D1
公开(公告)日：2010-10-07
申请号：DE60237476
申请日：2002-11-15
Applicant: IBM
Inventor： ABRAHAM DAVID WILLIAM , TROUILLOUD PHILIP LOUIS
IPC: G11C11/15 , G11C11/18 , G11C7/02 , G11C7/04 , G11C11/00 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L43/08
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公开(公告)号：DE69903206T2
公开(公告)日：2003-07-10
申请号：DE69903206
申请日：1999-01-20
Applicant: IBM
IPC: G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/08
Abstract: Magnetic memory devices are disclosed having multiple magnetic tunnel junctions therein writable together into an average state. For example, a magnetic random access memory ("MRAM") array is disclosed having respective pluralities of crossing first and second electrically conductive lines forming a plurality of intersecting regions across the array. The array includes a plurality of magnetic memory cells, each disposed at a respective one of the plurality of intersecting regions. Each cell includes at least two magnetic tunnel junctions therein, writable together into an average state, according to electrical and resultant magnetic stimuli applied thereto via a respective first and second conductive line. The at least two magnetic tunnel junctions provided in each magnetic memory cell provide a predictable magnetic response for all cells across the array. Only the cell at an intersecting region selected by stimuli applied via each of the first and second electrically conductive lines forming the selected region is written, and other cells along the first and second electrically conductive lines forming the selected region are not written. An operating window of applied electrical and therefore magnetic stimuli can be defined to ensure cell selectivity across the memory array.
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公开(公告)号：GB2520429B
公开(公告)日：2016-04-20
申请号：GB201419724
申请日：2014-11-05
Applicant: IBM , CROCUS TECHNOLOGY SA
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公开(公告)号：GB2520429A
公开(公告)日：2015-05-20
申请号：GB201419724
申请日：2014-11-05
Applicant: IBM , CROCUS TECHNOLOGY SA
Inventor： ANNUNZIATA ANTHONY JOSEPH , TROUILLOUD PHILIP LOUIS , WORLEDGE DANIEL CHRISTOPHER , BANDIERA SEBASTIEN , LOMBARD LUCIEN , PREJBEANU LUCIAN
Abstract: A thermally assisted magnetoresistive random access memory device (TAS-MRAM) with reduced power for reading and writing; the memory device comprising a tunnel barrier 14 sandwiched between a ferromagnetic sense layer 16 and a ferromagnetic storage layer 12. An antiferromagnetic pinning layer 30 is disposed adjacent to the ferromagnetic storage layer 12. The pinning layer 30 pins a magnetic moment of the storage layer until heating is applied. Either or both of the storage and sense ferromagnetic layers includes a non-magnetic material to reduce the magnetization of the respective layers. The reduction in the storage layer magnetization and sense layer magnetization reduces the magnetostatic interaction between the storage layer and sense layer, resulting in less read/write power. The ferromagnetic materials in the sense and storage layers may include at least one of Co, Fe, Ni, and any alloy including Co, Fe, Ni, whilst the non-magnetic material includes at least one of Ta, Ti, Hf, Cr, Nb, Mo, Zr and any alloy containing Ta, Ti, Hf, Cr, Nb, Mo, Zr. The antiferromagnetic pinning layer may have a diameter less than 250nm based on the reduction in magnetization of at least one of the storage or sense layer. The ferromagnetic storage layer may be formed by sputtering ,chemical vapour (vapor) deposition CVD or physical vapour deposition PVD , and may involve co-sputtering the ferromagnetic and non magnetic material, or forming multi-layers of ferromagnetic and non magnetic material. The ferromagnetic sense layer may also be formed by co-sputtering of ferromagnetic and non magnetic material or forming multilayers of the two materials. An alternative embodiment (figures 7A/B) comprises a tunnel barrier layer 14 sandwiched between a ferromagnetic storage layer 16 and a synthetic antiferromagnetic storage layer 12, which includes a first ferromagnetic storage layer 11 adjacent to the tunnel barrier layer and a non magnetic coupling layer 15 sandwiched between the first ferromagnetic storage layer 11 and a second ferromagnetic storage layer 13. The alternative structure further allows for a relative increase in the thickness of the first ferromagnetic layer 11.
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