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公开(公告)号：FR2335952A1
公开(公告)日：1977-07-15
申请号：FR7632458
申请日：1976-10-18
Applicant: IBM
Inventor： BOGH ARMIN , MIRBACH ERICH , EBERT ECKEHARD
IPC: H01L21/314 , H01L21/318 , H01L21/306
Abstract: A semiconductor dielectric layer formed of silicon nitride having a uniform dispersion of carbon therein for providing reduced intrinsic tensile stresses of less than 10 x 109 dyn/cm2.
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