公开(公告)号：FR2335952A1

公开(公告)日：1977-07-15

申请号：FR7632458

申请日：1976-10-18

Applicant: IBM

Inventor： BOGH ARMIN ,  MIRBACH ERICH ,  EBERT ECKEHARD

IPC: H01L21/314 ,  H01L21/318 ,  H01L21/306

Abstract: A semiconductor dielectric layer formed of silicon nitride having a uniform dispersion of carbon therein for providing reduced intrinsic tensile stresses of less than 10 x 109 dyn/cm2.

公开(公告)号：DE2557079A1

公开(公告)日：1977-06-30

申请号：DE2557079

申请日：1975-12-18

Applicant: IBM DEUTSCHLAND

Inventor： BOHG ARMIN DIPL PHYS ,  MIRBACH ERICH ,  EBERT ECKEHARD

IPC: H01L21/306 ,  H01L21/314 ,  H01L21/318

Abstract: A semiconductor dielectric layer formed of silicon nitride having a uniform dispersion of carbon therein for providing reduced intrinsic tensile stresses of less than 10 x 109 dyn/cm2.

公开(公告)号：DE1769327A1

公开(公告)日：1972-03-02

申请号：DE1769327

申请日：1968-05-09

Applicant: IBM DEUTSCHLAND

Inventor： EBERT ECKEHARD ,  HEINEMANN ALFRED

IPC: C30B25/02 ,  H01L21/205 ,  B01J17/32

公开(公告)号：CA1078972A

公开(公告)日：1980-06-03

申请号：CA268095

申请日：1976-12-17

Applicant: IBM

Inventor： BOHG ARMIN ,  MIRBACH ERICH ,  EBERT ECKEHARD

IPC: H01L21/306 ,  H01L21/314 ,  H01L21/318 ,  H01L21/72 ,  H01L21/467

Abstract: METHOD OF MAKING A MASKING LAYER The invention relates to a method of making a masking layer for silicon semiconductor bodies, where layers consisting of silicon dioxide and of silicon nitride are arranged one directly above the other on the surface of a semiconductor body.

公开(公告)号：GB1235784A

公开(公告)日：1971-06-16

申请号：GB2276069

申请日：1969-05-05

Applicant: IBM

Inventor： EBERT ECKEHARD ,  HEINEMANN ALFRED

IPC: C30B25/02 ,  H01L21/205

Abstract: 1,235,784. Silicon. INTERNATIONAL BUSINESS MACHINES CORP. 5 May, 1969 [9 May, 1968], No. 22760/69. Heading C1A. [Also in Division C7] In the epitaxial deposition of silicon on a heated substrate by the pyrolytic decomposition of a gaseous vapour phase, the source of silicon is mono-iodo silane, SH 3 I. The gaseous or vapour phase may contain doping agents.