公开(公告)号：US3849707A

公开(公告)日：1974-11-19

申请号：US33877373

申请日：1973-03-07

Applicant: IBM

Inventor： BRASLAU N ,  CUOMO J ,  HARRIS E ,  HOVEL H

IPC: H01L33/00 ,  H05B33/12

CPC classification number: H05B33/12 ,  H01L33/00 ,  H01L33/007 ,  Y10S148/059 ,  Y10S148/113 ,  Y10S257/926

Abstract: A GaN electroluminescent structure has been fabricated on a silicon substrate allowing for the construction of light-emitting diodes in the visible region on a planar surface carrying other silicon dependent devices.

Abstract translation: 已经在硅衬底上制造了GaN电致发光结构，允许在携带其它硅依赖器件的平面上的可见区域中构造发光二极管。