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公开(公告)号：US3852796A
公开(公告)日：1974-12-03
申请号：US26086172
申请日：1972-06-08
Applicant: IBM
IPC: G11C11/41 , G11C11/39 , G11C13/00 , H01L21/8247 , H01L29/20 , H01L29/267 , H01L29/68 , H01L29/788 , H01L29/792 , H01L45/00 , H03K17/56 , H03K17/70
CPC classification number: G11C11/39 , H01L29/2003 , H01L29/267 , H01L29/685 , Y10S148/017 , Y10S148/059 , Y10S148/072 , Y10S148/113 , Y10S148/158 , Y10S257/926
Abstract: A non-volatile bistable switch and memory device comprising a GaN-Si heterojunction. Switching between its high impedance state and low impedance state, and viceversa, may be effected in either a bipolar or unipolar mode. Impedance states are retained up to several months with zero power.
Abstract translation: 包括GaN-Si异质结的非易失性双稳态开关和存储器件。 在其高阻抗状态和低阻抗状态之间切换，反之亦然，可以以双极或单极模式实现。 阻抗状态保持多达几个月，零功率。
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公开(公告)号：US3849707A
公开(公告)日：1974-11-19
申请号：US33877373
申请日：1973-03-07
Applicant: IBM
CPC classification number: H05B33/12 , H01L33/00 , H01L33/007 , Y10S148/059 , Y10S148/113 , Y10S257/926
Abstract: A GaN electroluminescent structure has been fabricated on a silicon substrate allowing for the construction of light-emitting diodes in the visible region on a planar surface carrying other silicon dependent devices.
Abstract translation: 已经在硅衬底上制造了GaN电致发光结构，允许在携带其它硅依赖器件的平面上的可见区域中构造发光二极管。
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