公开(公告)号：US3461300A

公开(公告)日：1969-08-12

申请号：US3461300D

申请日：1966-08-31

Applicant: IBM

Inventor： BRAUN ROLAND J

IPC: H03G3/30 ,  H01J39/12

CPC classification number: H03G3/3084

公开(公告)号：CA1095168A

公开(公告)日：1981-02-03

申请号：CA277285

申请日：1977-04-29

Applicant: IBM

Inventor： BRAUN ROLAND J

IPC: G11C11/14 ,  G11C19/08 ,  H01F13/00

Abstract: BUBBLE MEMORY PACKAGE Dual, slotted reflection plates for a bubble memory package use electrically and thermally conductive plates spaced just far enough apart to accept one or two levels of bubble memory devices between them. Each plate has a plurality of slots therein, each matching the appropriate portions of the coil generating the magnetic field for the bubble memory package.

公开(公告)号：CA1067972A

公开(公告)日：1979-12-11

申请号：CA278023

申请日：1977-05-10

Applicant: IBM

Inventor： BRAUN ROLAND J ,  VON VOSS WILLIAM D

IPC: H05K1/11 ,  H01L23/50 ,  H01R4/02 ,  H05K1/18 ,  H05K3/34 ,  H05K1/04

Abstract: ELECTRICAL CONNECTION STRUCTURE AND METHOD Surface connections of electrical component leads to circuit substrate lands are made with split sleeves on the lead ends, adjusted for contact with the lands, and soldered in position to join leads, sleeves, and lands.

公开(公告)号：FR2354019A1

公开(公告)日：1977-12-30

申请号：FR7713450

申请日：1977-04-26

Applicant: IBM

Inventor： BRAUN ROLAND J

IPC: H05K1/11 ,  H01L23/50 ,  H01R4/02 ,  H05K1/18 ,  H05K3/34 ,  H05K3/32

公开(公告)号：FR2366664A1

公开(公告)日：1978-04-28

申请号：FR7712660

申请日：1977-04-22

Applicant: IBM

Inventor： BRAUN ROLAND J

IPC: G11C11/14 ,  G11C19/08 ,  H01F13/00

公开(公告)号：CA1017874A

公开(公告)日：1977-09-20

申请号：CA212823

申请日：1974-11-01

Applicant: IBM

Inventor： BRAUN ROLAND J ,  KUNTZLEMAN HARRY C ,  MEIER HERBERT E

IPC: G01R15/20 ,  H01L43/04

公开(公告)号：CA1101545A

公开(公告)日：1981-05-19

申请号：CA286529

申请日：1977-09-12

Applicant: IBM

Inventor： BRAUN ROLAND J

IPC: G11C11/14 ,  G11C19/08

Abstract: ROTATIONAL FIELD GENERATOR FOR BUBBLE MEMORY PACKAGE For a bubble memory package, the two conductors operative to generate the rotational magnetic field consist of two thin, solid disks with a number of current contact points around their respective peripheries. Then, by selectively advancing the current injection/extraction points around the periphery, the current through the disks and thus the associated magnetic field can be rotated over a full 360.degree. thereby generating the rotational magnetic field required to effect the domain propagation necessary to the operation and function of a bubble memory device.

公开(公告)号：FR2368116A1

公开(公告)日：1978-05-12

申请号：FR7726005

申请日：1977-08-19

Applicant: IBM

Inventor： BRAUN ROLAND J

IPC: G11C11/14 ,  G11C19/08

Abstract: For a bubble memory package, the two conductors operative to generate the rotational magnetic field consist of two thin, solid disks with a number of current contact points around their respective peripheries. Then, by selectively advancing the current injection/extraction points around the periphery, the current through the disks and thus the associated magnetic field can be rotated over a full 360 DEG thereby generating the rotational magnetic field required to effect the domain propagation necessary to the operation and function of a bubble memory device.

公开(公告)号：CA1023873A

公开(公告)日：1978-01-03

申请号：CA191528

申请日：1974-02-01

Applicant: IBM

Inventor： BRAUN ROLAND J

IPC: H01L27/22 ,  H01L43/06 ,  H03K17/90 ,  H01V5/00

Abstract: Offset voltage control means are provided for a semiconductor type Hall cell. The control means includes one or more auxiliary electrodes disposed at preselected spatial positions of the cell between the latter's current and sense electrodes. The auxiliary electrode(s) when connected to a predetermined electrical supply provide an auxiliary electrical field which controls the offset voltage at the sense electrodes.

公开(公告)号：CA829483A

公开(公告)日：1969-12-09

申请号：CA829483D

Applicant: IBM

Inventor： BRAUN ROLAND J