公开(公告)号：AU2365277A

公开(公告)日：1978-09-28

申请号：AU2365277

申请日：1977-03-25

Applicant: IBM

Inventor： BARILE CONRAD A ,  BRILL ROBERT M ,  FORNERIS JOHN L ,  REGH JOSEPH

IPC: H01L21/306 ,  H01L21/033 ,  H01L21/22 ,  H01L21/223 ,  H01L21/265 ,  H01L21/266 ,  H01L21/331 ,  H01L29/73 ,  H01L21/283 ,  H01L21/31 ,  H01L21/32 ,  H01L27/04

公开(公告)号：CA1082373A

公开(公告)日：1980-07-22

申请号：CA273411

申请日：1977-03-08

Applicant: IBM

Inventor： BARILE CONRAD A ,  BRILL ROBERT M ,  FORNERIS JOHN L ,  REGH JOSEPH

IPC: H01L21/306 ,  H01L21/033 ,  H01L21/22 ,  H01L21/223 ,  H01L21/265 ,  H01L21/266 ,  H01L21/331 ,  H01L29/73 ,  H01L21/324

Abstract: A METHOD OF FORMING AN INTEGRATED CIRCUIT REGION THROUGH THE COMBINATION OF ION IMPLANTATION AND DIFFUSION STEPS A region in an integrated circuit substrate is formed by first ion implanting impurities of a selected conductivity-determining type into a semiconductor substrate through at least one aperture in a masking electrically insulative layer, and then diffusing a conductivitydetermining impurity of the same type through the same aperture into said substrate. The method has particular application when the electrically insulative layer is a composite of two layers, e.g., a top layer of silicon nitride and a bottom layer of silicon dioxide and the aperture is thus a pair of registered openings respectively through said silicon nitride and silicon dioxide layers, and the aperture through the silicon dioxide layer has greater lateral dimensions than that in the silicon nitride layer to provide an undercut beneath the silicon nitride ion implantation barrier layer.

公开(公告)号：FR2347778A1

公开(公告)日：1977-11-04

申请号：FR7705178

申请日：1977-02-18

Applicant: IBM

Inventor： BARILE CONRAD A ,  BRILL ROBERT M ,  FORNERIS JOHN L ,  REGH JOSEPH

IPC: H01L21/306 ,  H01L21/033 ,  H01L21/22 ,  H01L21/223 ,  H01L21/265 ,  H01L21/266 ,  H01L21/331 ,  H01L29/73 ,  H01L21/82