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公开(公告)号:DE3068722D1
公开(公告)日:1984-08-30
申请号:DE3068722
申请日:1980-11-14
Applicant: IBM DEUTSCHLAND , IBM
Inventor: BRISKA MARIAN , METZGER GERT , THIEL KLAUS PETER
IPC: C03C15/00 , C30B31/02 , H01L21/22 , H01L21/223 , H01L21/306 , H01L21/31 , H01L21/311
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公开(公告)号:DE3175593D1
公开(公告)日:1987-01-02
申请号:DE3175593
申请日:1981-06-05
Applicant: IBM DEUTSCHLAND , IBM
Inventor: BAHR DIETRICH JURGEN DR , BRISKA MARIAN
IPC: B41M5/24
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公开(公告)号:DE3171700D1
公开(公告)日:1985-09-12
申请号:DE3171700
申请日:1981-08-21
Applicant: IBM DEUTSCHLAND , IBM
Inventor: BAHR DIETRICH JURGEN DR , BRISKA MARIAN
IPC: B41M5/24 , C09D101/14 , C09D3/14
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公开(公告)号:DE3470811D1
公开(公告)日:1988-06-01
申请号:DE3470811
申请日:1984-10-31
Applicant: IBM DEUTSCHLAND , IBM
Inventor: BRISKA MARIAN , ELSNER GERHARD DR , HINKEL HOLGER DR
Abstract: A magnetic recording disk comprises a magnetic layer consisting of a binder and magnetic particles, a silicon substrate and abrasion-resistant material formed on the silicon substrate. The abrasion-resistant material is in the form of elevations which protrude from the silicon substrate and whose surface is coplanar with the surface of the magnetic layer. The abrasion-resistant elevations are formed on the substrate in a predetermined uniform distribution either after the surface of the substrate has been blanket doped and/or covered with a layer comprising aluminum as a main component, by tempering and optionally oxidizing; or after the surface of the substrate has been selectively doped, by etching off the undoped regions of the surface of the substrate.
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公开(公告)号:DE3168266D1
公开(公告)日:1985-02-28
申请号:DE3168266
申请日:1981-05-19
Applicant: IBM DEUTSCHLAND , IBM
Inventor: BAHR DIETRICH JURGEN DR , BRISKA MARIAN
Abstract: The lacquer contains a white pigment with a grain size bigger than all other pigments in the lacquer. This white pigment either changes its color itself under the influence of heat, or under the influence of heat with a substance coacting with the pigment. Preferably used is a natural or synthetic hard polymer, or in particular, calcium carbonate with an admixture of approximately 10% sodium glycolate.
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公开(公告)号:DE3171958D1
公开(公告)日:1985-10-03
申请号:DE3171958
申请日:1981-01-23
Applicant: IBM
Inventor: BAHR DIETRICH JURGEN DR , BRISKA MARIAN
IPC: C08L1/00 , B41M5/24 , C09D101/08 , C09D101/14 , C09D3/14
Abstract: A process for producing a mechanically stable, heat resistant lacquer for record carriers on a cellulose monobutyrate basis, whereby the cellulose aceto monobutyrate and a polyvinyl ester copolymer with long aliphatic side chains are mixed with each other and are processed in the form of a lacquer after addition of the fillers and/or pigments.
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7.
公开(公告)号:ZA8106774B
公开(公告)日:1982-09-29
申请号:ZA8106774
申请日:1981-09-30
Applicant: IBM
Inventor: BAHR DIETRICH JUERGEN , BRISKA MARIAN
CPC classification number: B41M5/245
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公开(公告)号:FR2411028A1
公开(公告)日:1979-07-06
申请号:FR7832170
申请日:1978-11-06
Applicant: IBM
Inventor: BRISKA MARIAN , HOFFMEISTER WOLFGANG W , THIEL KLAUS P
IPC: C30B31/02 , H01L21/22 , H01L21/225 , B01J17/36
Abstract: A process for manufacturing Phosphorus-doped surface layers in semiconductor substrates. The surface of the substrate is wetted with hot phosphoric acid and then coated prior to diffusion with a layer of material which is stable at the diffusion temperature.
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公开(公告)号:FR2286888A1
公开(公告)日:1976-04-30
申请号:FR7526332
申请日:1975-08-19
Applicant: IBM
Inventor: EISENBRAUN EWALD , BRISKA MARIAN
IPC: C23C16/40 , H01L21/316 , C23C11/08 , H01L21/76
Abstract: The method of producing pyrolytic SiO2 on the surface of a substrate comprises mixing SiH4 and NOCl in an atmosphere of carrier gas, and passing the gas mixture over the heated substrate. With this process, precipitation of SiO2 on the walls of the reaction chamber is avoided.
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公开(公告)号:DE2447224A1
公开(公告)日:1976-04-15
申请号:DE2447224
申请日:1974-10-03
Applicant: IBM DEUTSCHLAND
Inventor: EISENBRAUN EWALD DIPL PHYS DR , BRISKA MARIAN
IPC: C23C16/40 , H01L21/316 , C23C11/08
Abstract: The method of producing pyrolytic SiO2 on the surface of a substrate comprises mixing SiH4 and NOCl in an atmosphere of carrier gas, and passing the gas mixture over the heated substrate. With this process, precipitation of SiO2 on the walls of the reaction chamber is avoided.
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