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公开(公告)号：FR2411028A1
公开(公告)日：1979-07-06
申请号：FR7832170
申请日：1978-11-06
Applicant: IBM
Inventor： BRISKA MARIAN , HOFFMEISTER WOLFGANG W , THIEL KLAUS P
IPC: C30B31/02 , H01L21/22 , H01L21/225 , B01J17/36
Abstract: A process for manufacturing Phosphorus-doped surface layers in semiconductor substrates. The surface of the substrate is wetted with hot phosphoric acid and then coated prior to diffusion with a layer of material which is stable at the diffusion temperature.
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