公开(公告)号：FR2411028A1

公开(公告)日：1979-07-06

申请号：FR7832170

申请日：1978-11-06

Applicant: IBM

Inventor： BRISKA MARIAN ,  HOFFMEISTER WOLFGANG W ,  THIEL KLAUS P

IPC: C30B31/02 ,  H01L21/22 ,  H01L21/225 ,  B01J17/36

Abstract: A process for manufacturing Phosphorus-doped surface layers in semiconductor substrates. The surface of the substrate is wetted with hot phosphoric acid and then coated prior to diffusion with a layer of material which is stable at the diffusion temperature.

公开(公告)号：CA1125440A

公开(公告)日：1982-06-08

申请号：CA334391

申请日：1979-08-24

Applicant: IBM

Inventor： BRISKA MARIAN ,  THIEL KLAUS P

IPC: H01L21/22 ,  C30B31/02 ,  H01L21/223 ,  H01L21/311 ,  H01L21/316

Abstract: Disclosure Number Docket Number GE 877 216 GE 978 008 Method of doping silicon with boron by means of diffusion, where in a first heating process the silicon is exposed to a gas stream containing boron and oxygen in a predetermined quantitative ratio, with a boron glass layer forming on the silicon, and beneath said boron glass layer, in the unmasked areas, an SiB6 layer, where the boron glass, without the silicon being substantially affected, is subsequently removed, and where finally in a second heating process boron is driven into the silicon. The method is suitable for producing silicon areas of low as well as of high boron doping. For making the former, the gas stream contains oxygen during the entire first heating process, and the drive-in is performed in an oxidizing atmosphere. For the entire silicon bodies and batches highly homogeneous Rs and xj values are reproducibly obtained. When making the highly doped areas the phase during the first heating process when the boron coating is taking place is very short, and it is only during that phase that the gas stream also contains oxygen. Driving-in takes place in an inert atmosphere, It is important to note that the thus produced boron-doped areas can overlap with highly arsenic-doped areas without any dislocations being produced in the overlapping areas.

公开(公告)号：CA1101740A

公开(公告)日：1981-05-26

申请号：CA314923

申请日：1978-10-30

Applicant: IBM

Inventor： ALAMEDDINE OUSSAMA ,  BRISKA MARIAN ,  THIEL KLAUS P

IPC: H01L31/04 ,  H01L21/28 ,  H01L31/02 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/18 ,  H01L21/302

Abstract: The present specification discloses a method of making a silicon photoelectric cell, particularly solar cell, in which an N-doped Si-layer covered at one of the surfaces thereof with a metal coating serving as an electrode is coated on the other surface with a close network of Si-pyramide for providing an antireflex coating. For making silicon photoelectric cells, particularly solar cells, a great number of process steps have been required up to now, which in itself necessarily involves considerable manufacturing expenses. The specification discloses a manufacturing process for solar cells which compared with hitherto existing processes is much less complicated, and which with considerable reduced efforts can provide reliable and highly efficient solar cells, or photoelectric cells, in a very simple manner. This object is achieved by, after the application of aluminum and silicon onto the other surface of the Si-layer for providing the antireflex coating, subjecting the Si-layer to a heating process to lower the eutactic temperature of the aluminum-silicon in an inert atmosphere until Si-pyramids coated with a thin Al film are formed and subsequently partially removing the thin Al film to form a comb-shaped electrode on the Si-pyramids. According to the process of the present invention the semiconductor surface is covered with microscopically small pyramids and therefore a highly efficient antireflex and correspondly good light absorption properties result. Due to internal multi-reflections of the long-wave light between the back and front of the photoelectric cell, the semiconductor surface covered with the pyramid network correspondingly improves the efficiency of the cell.