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    METHOD OF ASSEMBLING ARRAY OF PARTICULATES
    2.
    发明专利
    METHOD OF ASSEMBLING ARRAY OF PARTICULATES 审中-公开

    公开(公告)号：JP2002361600A

    公开(公告)日：2002-12-18

    申请号：JP2002031640

    申请日：2002-02-08

    Applicant: IBM

    Inventor： MISEWICH JAMES ,  MURRAY CHRISTOPHER B ,  SCHROTT ALEJANDRO G

    IPC: B82B3/00 ,  G01B11/16 ,  G01Q60/00 ,  G01Q80/00 ,  G11B5/85 ,  G11B5/851 ,  H01L21/027 ,  H01L21/8246 ,  H01L27/105

    Abstract: PROBLEM TO BE SOLVED: To provide a method of assembling an array of particulates or molecules using an atomic force microscope for partitioning a ferro-dielectric magnetic domain. SOLUTION: A ferro-dielectric thin film 12 is attached onto a base board 11 which forms a work to be processed, and patterns are formed on the thin film using atomic force microscope which has an electroconductive probe 13 so that the desired nano-circuit pattern is partitioned. Then a selected region on the thin film is exposed to a solution containing chemical seed(s) to be adsorbed or accumulated selectively under influence of the electrophoretic force.

    Field-effect transistor structure having double layer perovskite oxide electrode and method for forming it
    3.
    发明专利
    Field-effect transistor structure having double layer perovskite oxide electrode and method for forming it 有权
    具有双层氧化铝氧化物电极的场效应晶体管结构及其形成方法

    公开(公告)号：JP2003031815A

    公开(公告)日：2003-01-31

    申请号：JP2002110272

    申请日：2002-04-12

    Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーション

    Inventor： MISEWICH JAMES A ,  RAMESH RAMAMOORTHY ,  SCHROTT ALEJANDRO G

    IPC: H01L21/28 ,  H01L21/306 ,  H01L21/336 ,  H01L29/417 ,  H01L29/786 ,  H01L39/22 ,  H01L49/00

    CPC classification number: H01L49/003

    Abstract: PROBLEM TO BE SOLVED: To provide an oxide channel FET structure for incorporating a buried oxide channel by incorporating conductive metallic oxide electrodes for buried source and drain electrodes.
    SOLUTION: A method for constructing the oxide electrodes for use in an oxide channel field-effect transistor (OxFET) device is disclosed. The electrodes are formed by first depositing a double layer 130 and 140 of conducting perovskite oxides onto an insulating oxide substrate. A resist pattern with the electrode configuration is then defined over the double layer. The top oxide layer is ion milled to a depth without reaching the substrate. Chemical etching of RIE is used to remove the part of the lower conductive oxide layer. The source and drain electrodes are thereby defined, which can be then used as buried contacts.
    COPYRIGHT: (C)2003,JPO

    Abstract translation: 要解决的问题：提供一种用于通过引入用于埋入的源极和漏极的导电金属氧化物电极来引入掩埋氧化物沟道的氧化物沟道FET结构。 解决方案：一种用于构建用于氧化物沟道场效应晶体管（OxFET）器件的氧化物电极的方法。 电极通过首先将导电钙钛矿氧化物的双层130和140首先沉积到绝缘氧化物衬底上而形成。 然后在双层上限定具有电极构型的抗蚀剂图案。 将顶部氧化物层离子研磨至深度而不到达基底。 使用RIE的化学蚀刻去除下部导电氧化物层的一部分。 源极和漏极由此被限定，其然后可以用作埋入触点。

    COMPLEMENTARY FIELD-EFFECT TRANSISTOR STRUCTURE AND ITS MANUFACTURE
    4.
    发明专利
    COMPLEMENTARY FIELD-EFFECT TRANSISTOR STRUCTURE AND ITS MANUFACTURE 失效

    公开(公告)号：JP2000332133A

    公开(公告)日：2000-11-30

    申请号：JP2000131749

    申请日：2000-04-28

    Applicant: IBM

    Inventor： JAMES A MAISUUICCHI ,  SCHROTT ALEJANDRO G ,  BRUCE A SCOTT

    IPC: H01L29/12 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/786

    Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a complementary field-effect transistor structure having an oxide channel of a Mott material. SOLUTION: A method for manufacturing complementary field-effect transistor structure includes a step of forming a laminated structure having first and second sides. The first side has a first-type Mott channel layer 107 and the second side has a second-type Mott channel layer 106. A first source area 408 and a first drain area 409 are formed in the first side, and a second source area 302 and a second drain area 303 are formed in the second side. A first gate area 301 is formed in the second side and a second gate area 301 is formed in the first side. The first source, drain, and gate areas 408, 409, and 301 constitute a first-type field effect transistor, and the second source, drain, and gate areas 302, 303, and 412 constitute a second-type field effect transistor.

    Einkristallines Phasenwechselmaterial
    7.
    发明专利
    Einkristallines Phasenwechselmaterial 未知

    公开(公告)号：DE112010003917T5

    公开(公告)日：2012-11-22

    申请号：DE112010003917

    申请日：2010-11-03

    Applicant: IBM ,  MACRONIX INT CO LTD

    Inventor： LAM CHUNG HON ,  SCHROTT ALEJANDRO G ,  CHEN CHIEH-FANG

    IPC: H01L45/00 ,  B05D5/00

    Abstract: Ein Verfahren zum Herstellen einer Phasenwechselspeicher(PCM)-Zelle beinhaltet Bilden einer dielektrischen Schicht oberhalb einer Elektrode, wobei die Elektrode ein Elektrodenmaterial umfasst; Bilden eines Durchgangslochs in der dielektrischen Schicht, sodass das Durchgangsloch bis hinunter zu der Elektrode reicht; und Wachsen eines Einkristalls eines Phasenwechselmaterials auf der Elektrode in dem Durchgangsloch. Eine Phasenwechselspeicher(PCM)-Zelle beinhaltet eine Elektrode, die ein Elektrodenmaterial umfasst; eine dielektrische Schicht oberhalb der Elektrode; ein Durchgangsloch in der dielektrischen Schicht; und einen Einkristall eines Phasenwechselmaterials angeordnet in dem Durchgangsloch, wobei der Einkristall die Elektrode am Boden des Durchgangslochs berührt.

    Single crystal phase change material
    10.
    发明专利
    Single crystal phase change material 未知

    公开(公告)号：GB2488692A

    公开(公告)日：2012-09-05

    申请号：GB201208734

    申请日：2010-11-03

    Applicant: IBM ,  MACRONIX INT CO LTD

    Inventor： LAM CHUNG HON ,  SCHROTT ALEJANDRO G ,  CHEN CHIEH-FANG

    IPC: H01L45/00 ,  B05D5/00 ,  G11C13/00 ,  H01L21/28 ,  H01L27/24

    Abstract: A method for fabricating a phase change memory (PCM) cell includes forming a dielectric layer over an electrode, the electrode comprising an electrode material; forming a via hole in the dielectric layer such that the via hole extends down to the electrode; and growing a single crystal of a phase change material on the electrode in the via hole. A phase change memory (PCM) cell includes an electrode comprising an electrode material; a dielectric layer over the electrode; a via hole in the dielectric layer; and a single crystal of a phase change material located in the via hole, the single crystal contacting the electrode at the bottom of the via hole.

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