MAGNETORESISTANCE SENSOR BASED ON SPIN VALVE EFFECT AND SYSTEM UTILIZING MAGNETORESISTANCE SENSOR THEREOF

    公开(公告)号:JPH0660336A

    公开(公告)日:1994-03-04

    申请号:JP609592

    申请日:1992-01-17

    Applicant: IBM

    Abstract: PURPOSE: To obtain an MR sensor by spin-volve effect which shows high magnetoresistance(MR) responsiveness even in a weak magnetic field applied, and to obtain its use system. CONSTITUTION: The MR sensor is formed on a base layer 11, and a first thin film layer 12 of a ferromagnetic material and a second thin film layer 16 are separated from each other by a nonmagnetic metal thin film layer 14 such as Cu, Au and Ag to constitute a layer structure. At least one of the first and second thin film layers consists of Co or Co alloy. The magnetization direction of the first thin film layer is almost perpendicular to the magnetization direction of the second thin film layer fixed to a specified direction when a magnetic field is not applied. When the magnetization direction of the first thin film layer is rotated, an electric current is produced through the sensor, which changes the voltage on the both end terminals of the resistance of the MR sensor. Thus, the magnetic field can be detected. Further, a thin film layer 18 of an exchange bias material may be formed.

    DOUBLE-SPIN BULB MAGNETIC RELUCTANCE SENSOR

    公开(公告)号:JPH06223336A

    公开(公告)日:1994-08-12

    申请号:JP27514193

    申请日:1993-11-04

    Applicant: IBM

    Abstract: PURPOSE: To provide a magnetic resistance sensor in which conductive electrons scattered in any direction can be used. CONSTITUTION: A magnetic resistance reading sensor having a multilayer double spin valve constitution is provided, based on a spin valve effect. The reading element of this sensor includes first, second, and third ferromagnetic layers 31, 35, and 39 mutually separated by anti-ferromagnetic metallic layers 33 and 37. The magnetizing directions of the first and third ferromagnetic layers 31 and 39, that is, the outside layers of this structure are fixed. The middle second ferromagnetic layer 35 is soft magnetic one, and when an applied magnetic field is absent, the magnetizing direction is vertical to the magnetizing directions of both the outside ferromagnetic layers. In one preferred embodiment, the magnetizing directions of the two outside ferromagnetic layers are mutually fixed in parallel by the switched connection with the adjacent anti-ferromagnetic layers.

    MAGNETIC RELUCTANCE SENSOR PROVIDED WITH NONMAGNETIC BACK LAYER

    公开(公告)号:JPH06236527A

    公开(公告)日:1994-08-23

    申请号:JP232694

    申请日:1994-01-14

    Applicant: IBM

    Abstract: PURPOSE: To change a magnetizing direction between adjacent magnetic layers by constituting a spin valve effect magnetoresistive reade transducer of first and second ferromagnetic thin layers separated by a non-magnetic metallic thin layer, and backing at least the first thin layer by a non-magnetic conductive layer. CONSTITUTION: An antiferromagnetic magnetic bias or a fixed layer is fixed at first, and then fixed ferromagnetic layer, non-magnetic spacer layer, free filter/back 2 layers are fixed in this order. That is, at the time of forming a reverse magnetic resistance spin valve sensor 60, an antiferromagnetic exchange bias layer 67, a first ferromagnetic layer 69, a non-magnetic metallic spacer layer 71, a second ferromagnetic layer 73 and a non-magnetic conductive back layer 76 are formed on a buffer layer 63 provided on a proper substrate 61. When there is no impressed magnetic field, the magnetizing direction of the layer 69 is fixed to a preferred direction vertical to the magnetizing direction of the layer 73, and when the magnetic field is applied, an angle between the magnetizing directions of the adjacent magnetic layers is changed as a cosine.

    MAGNETIC-RELUCTANCE SENSOR
    5.
    发明专利

    公开(公告)号:JPH06203340A

    公开(公告)日:1994-07-22

    申请号:JP28307193

    申请日:1993-11-12

    Applicant: IBM

    Abstract: PURPOSE: To considerably increase the sensitivity of a sensor by permitting magnetization in two ferromagnetic layers to respond to applied magnetic signals and providing an MR sensor supplying a measurement signal reinforced by the magnetic signals. CONSTITUTION: One slider 13 is positioned on a disk 12 and respective sliders 13 support plural magnetic read/write converters 21. When the disk 12 rotates, the slider 13 operates inwards and outwards in the direction of a radius on a disk surface 22. A head 21 can access to various parts where desired data are recorded on the disk 12. The respective sliders 13 are fitted to actuator arms 19 by a suspending device 15. The suspending device 15 generates slight spring force and the sliders 13 are pressed on the disk surface 22 by the force. The respective actuator arms 19 are fitted to an actuator means 27 and a coil which can move in a fixed magnetic field is provided for a voice coil motor 18. The moving direction and speed of the coil are controlled by a motor radio wave signal.

    MAGNETIC RESISTANCE SENSOR
    6.
    发明专利

    公开(公告)号:JPH03144909A

    公开(公告)日:1991-06-20

    申请号:JP26967290

    申请日:1990-10-09

    Applicant: IBM

    Abstract: PURPOSE: To make it possible to largely take a region for obtaining a desired exchange bias and to facilitate a production process by forming an antiferromagnetic layer of an Fe(1-x) Mnx alloy which is an alloy composed of iron and Mn and specifying the range of (x) to 0.3 to 0.4. CONSTITUTION: The MR sensor consists of a transverse bias layer 12 laminated on a suitable substrate 10 and a nonmagnetic spacer layer 14 separating the same from an MR layer 16. The antiferromagnetic layer 24 is adhered to the MR layer 16 so as to come into direct contact at an atom level and is formed of the alloy Fe(1-x) Mnx composed of the iron and the Mn, in which (x) is specified to the range of 0.3 to 0.4. The compsn. of the FeMn layers is improved in such a manner, by which the exchange anisotropic energy and the exchange bias related therewith increases sharply up to a thickness of about 100Å and retains this value until the thickness of the antiferromagnetic layer 24 attains 800Å. The region for obtaining the desired exchange bias is thus largely taken and the production process is facilitated.

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