公开(公告)号：JPS6341049A

公开(公告)日：1988-02-22

申请号：JP9551387

申请日：1987-04-20

Applicant: IBM

Inventor： POORU SHIYUUUCHIYUNGU HOO ,  HARARANBOSU REFUAKISU ,  DEEBITSUDO ANSONII SUMISU ,  KINGUUNINGU CHIYU

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H05K3/38 ,  H05K3/46

公开(公告)号：JPS61295365A

公开(公告)日：1986-12-26

申请号：JP10875986

申请日：1986-05-14

Applicant: IBM

Inventor： YOAKIMU GERUHARUTO KURABESU ,  PIITAA OTSUTOO HAAN ,  POORU SHIYUUUCHIYUNGU HOU ,  HARARANBOSU REFUAKISU ,  GEIRII UEIN RUBUROFU

IPC: B29C35/08 ,  B29C59/16 ,  C08J7/00 ,  C23C14/02 ,  C23C14/20 ,  C23C16/02

公开(公告)号：JPH0212610A

公开(公告)日：1990-01-17

申请号：JP1009289

申请日：1989-01-20

Applicant: IBM

Inventor： ROBAATO EDOWAADO FUONTANA ,  JIEEMUSU KENTO HAWAADO ,  JIEEMUSU SHIIITANGU RII ,  HARARANBOSU REFUAKISU

IPC: G11B5/39

Abstract: PURPOSE: To make it possible to more meticulously control the resistivity character of a spacer layer by using nichrome or the nichrome added with chromium oxide as the spacer material of a magneto-resistive MR sensor. CONSTITUTION: This converter is provided with the thin-film MR layer 10 formed of a ferromagnetic material and the nonmagnetic thinfilm spacer layer 14 which comes into contact with the MR layer 10. The thin-film spacer layer 14 consists of the material selected from the group consisting of the nichrome and the nichrome contg. the chromium oxide. A soft magnetic material 12 is adhered in contact with the spacer layer 14 in such a manner that this material is arranged in parallel with the MR layer 10 isolatedly form the MR layer 10. The structure is capable of generating a bias in a transverse direction in at least part of the MR layer 10 and linearly maintaining the response of the part to be biased in the transverse direction of the MR layer 10. As a result, the MR sensor 8 including the nonmagnetic spacer layer 14 capable of strictly controlling the resistivity characteristic.

公开(公告)号：JPH06236527A

公开(公告)日：1994-08-23

申请号：JP232694

申请日：1994-01-14

Applicant: IBM

Inventor： BURUUSU ARUBUIN GAANII ,  DEEBUITSUDO YUUJIN HAIMU ,  HARARANBOSU REFUAKISU ,  OMARU YUU NIIDO ZA SAADO ,  BUAAJIRU SAIMON SUPERIOSU ,  DENISU RICHIYAADO UIRUHOITO

IPC: G01R33/09 ,  G11B5/00 ,  G11B5/39 ,  H01F10/08 ,  H01F10/30 ,  H01F10/32 ,  H01L43/08 ,  G01R33/06

Abstract: PURPOSE: To change a magnetizing direction between adjacent magnetic layers by constituting a spin valve effect magnetoresistive reade transducer of first and second ferromagnetic thin layers separated by a non-magnetic metallic thin layer, and backing at least the first thin layer by a non-magnetic conductive layer. CONSTITUTION: An antiferromagnetic magnetic bias or a fixed layer is fixed at first, and then fixed ferromagnetic layer, non-magnetic spacer layer, free filter/back 2 layers are fixed in this order. That is, at the time of forming a reverse magnetic resistance spin valve sensor 60, an antiferromagnetic exchange bias layer 67, a first ferromagnetic layer 69, a non-magnetic metallic spacer layer 71, a second ferromagnetic layer 73 and a non-magnetic conductive back layer 76 are formed on a buffer layer 63 provided on a proper substrate 61. When there is no impressed magnetic field, the magnetizing direction of the layer 69 is fixed to a preferred direction vertical to the magnetizing direction of the layer 73, and when the magnetic field is applied, an angle between the magnetizing directions of the adjacent magnetic layers is changed as a cosine.