ARRANGEMENT AND METHOD FOR SELECTIVE ELECTROCHEMICAL ETCHING

    公开(公告)号:CA1148111A

    公开(公告)日:1983-06-14

    申请号:CA348728

    申请日:1980-03-28

    Applicant: IBM

    Abstract: An apparatus for selective electrochemical etching, and an electrochemical etching process making use of this arrangement is described. The apparatus comprises a current supply, a cathode, means for making a workpiece into an anode, and means for covering the surface to be etched with an electrolyte. The current supply and the means for making an anode are designed in such a manner that two potentials are applied to the workpiece, one of which is at least as positive as the cathode potential, and the other more positive than the cathode potential. Where it is desired to etch N-doped silicon the apparatus also includes a lamp with a high light percentage in the near infrared range for irradiating the surface to be etched. GE9-78-026

    2.
    发明专利
    未知

    公开(公告)号:DE2917654A1

    公开(公告)日:1980-11-13

    申请号:DE2917654

    申请日:1979-05-02

    Abstract: An apparatus and method for selectively electrochemically etching a surface is described. The use of the apparatus and the related method allows the establishment of etched planar surface which may be inclined with respect to the original surface. The apparatus has a cathode and multiple connectors which attach to the workpiece whose surface is to be etched. When the apparatus is operated the potential of the connectors are set so that the cathode is at least as negative as the lowest potential of the connectors.

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