公开(公告)号：DE3175506D1

公开(公告)日：1986-11-27

申请号：DE3175506

申请日：1981-03-12

Applicant: IBM

Inventor： STOFFEL AXEL

IPC: H01L21/3213 ,  H01L21/033 ,  H01L21/28 ,  H01L21/321 ,  H01L21/336 ,  H01L21/8234 ,  H01L29/78 ,  H01L21/285 ,  H01L29/62

Abstract: A method is described for eliminating abnormalities in a polycrystalline silicon integrated circuit structure, such as a silicon gate field effect transistor structure. The layer (30, 40) of polysilicon is deposited on an insulator coating (24, 38) which may be the thickness of the gate dielectric. The polycrystalline silicon is delineated by lithographic techniques and a reactive ion etching process to form the desired conductor structure. A thickness of the polycrystalline silicon of the order of tens of nanometers is left upon the insulator coating (24) where the masking layer has openings. This thin coating of polycrystalline silicon is then thermally oxidized together with the exposed sidewall of the polycrystalline silicon in the areas under the opaque parts of the masking layer to form silicon dioxide on the sidewall of the polycrystalline silicon structures. A directional reactive ion etching of the silicon dioxide removes all silicon dioxide formed by the thermal oxidation step from the horizontal silicon substrate while leaving the silicon dioxide on the vertical sidewall regions. The method prevents the formation of a poor grade of silicon dioxide under the edges of the polycrystalline silicon conductor structure.

公开(公告)号：IT1150984B

公开(公告)日：1986-12-17

申请号：IT2072480

申请日：1980-03-18

Applicant: IBM

Inventor： BUHNE JOACHIM ,  SCHAFER ROLF ,  STOFFEL AXEL

IPC: C25F3/12 ,  C25F3/14 ,  H01L21/3063 ,  C25F

Abstract: An apparatus and method for selectively electrochemically etching a surface is described. The use of the apparatus and the related method allows the establishment of etched planar surface which may be inclined with respect to the original surface. The apparatus has a cathode and multiple connectors which attach to the workpiece whose surface is to be etched. When the apparatus is operated the potential of the connectors are set so that the cathode is at least as negative as the lowest potential of the connectors.

公开(公告)号：CA1148111A

公开(公告)日：1983-06-14

申请号：CA348728

申请日：1980-03-28

Applicant: IBM

Inventor： BUEHNE JOACHIM ,  SCHAEFER ROLF ,  STOFFEL AXEL

IPC: C25F3/12 ,  C25F3/14 ,  H01L21/3063 ,  C25F3/02 ,  C25F7/00

Abstract: An apparatus for selective electrochemical etching, and an electrochemical etching process making use of this arrangement is described. The apparatus comprises a current supply, a cathode, means for making a workpiece into an anode, and means for covering the surface to be etched with an electrolyte. The current supply and the means for making an anode are designed in such a manner that two potentials are applied to the workpiece, one of which is at least as positive as the cathode potential, and the other more positive than the cathode potential. Where it is desired to etch N-doped silicon the apparatus also includes a lamp with a high light percentage in the near infrared range for irradiating the surface to be etched. GE9-78-026