公开(公告)号：CA1085053A

公开(公告)日：1980-09-02

申请号：CA261428

申请日：1976-09-17

Applicant: IBM

Inventor： CADE PAUL E

IPC: G11C17/00 ,  G11C11/35 ,  G11C11/401 ,  G11C11/404 ,  G11C11/4074 ,  G11C17/12 ,  H01L21/8246 ,  H01L27/098 ,  H01L27/10 ,  H01L27/108 ,  H01L27/112 ,  H01L29/808 ,  G11C11/24 ,  G11C11/40

Abstract: DEPLETION MODE FIELD EFFECT TRANSISTOR MEMORY SYSTEM The present invention relates to an integrated memory system comprising an array of depletion mode field effect transistors operated in a common control electrode mode to provide an array with the density of metal oxide semiconductor field effect transistor arrays and the speed of bipolar transistor arrays. Each transistor of the array has a gate or control electrode surrounding a channel region of the device which gate is held at a reference potential with respect to the source and drain regions which are selectively biased. The invention can be utilized in both a random access memory and a read only memory mode. The read only mode is somewhat of a simpler structure capable of a higher density than that of the random access. In both cases a low capacity, high density, high speed memory which is self limiting as to current and which uses a lower power requirement than comparable Bipolar memories is realized. The field effect transistors of the invention are readily formed using existing processes that will permit bipolar devices to be made on the same chip.

公开(公告)号：FR2325149A1

公开(公告)日：1977-04-15

申请号：FR7625012

申请日：1976-08-10

Applicant: IBM

Inventor： CADE PAUL E

IPC: G11C17/00 ,  G11C11/35 ,  G11C11/401 ,  G11C11/404 ,  G11C11/4074 ,  G11C17/12 ,  H01L21/8246 ,  H01L27/098 ,  H01L27/10 ,  H01L27/108 ,  H01L27/112 ,  H01L29/808 ,  G11C11/40

Abstract: The present invention relates to an integrated memory system comprising an array of depletion mode field effect transistors operated in a common control electrode mode to provide an array with the density of metal oxide semiconductor field effect transistor arrays and the speed of bipolar transistor arrays. Each transistor of the array has a gate or control electrode surrounding a channel region of the device which gate is held at a reference potential with respect to the source and drain regions which are selectively biased.

公开(公告)号：DE3572259D1

公开(公告)日：1989-09-14

申请号：DE3572259

申请日：1985-05-29

Applicant: IBM

Inventor： CADE PAUL E ,  EL-KAREH BADIH ,  KIM ICK W

IPC: H01L21/02 ,  H01L21/58 ,  H01L21/74 ,  H01L21/762 ,  H01L21/84 ,  H01L23/58 ,  H01L27/00 ,  H01L27/12 ,  H01L23/56 ,  H01L21/76

Abstract: A method for fabrication of a buried field shield (64) in a semiconductor substrate. A seed substrate is prepared by depositing an epitaxial layer (54) onto a seed wafer (80) and then depositing a heavily doped layer (56) and a thin dielectric (58). The thin dielectric is patterned for contact holes and then a conductive field shield (64) is deposited and patterned. A thick quartz layer (66) is deposited over the field shield and dielectric. A mechanical substrate (68) is anodically bonded to the quartz (66) of the seed substrate and the original seed wafer (80) is etched back to expose the epitaxial layer (54) for further fabrication of integrated electronic devices therein.

公开(公告)号：CA1163712A

公开(公告)日：1984-03-13

申请号：CA392092

申请日：1981-12-11

Applicant: IBM

Inventor： CADE PAUL E

IPC: G01P15/08 ,  G01P15/125 ,  G02B6/12 ,  G02B26/08 ,  G02B26/10 ,  G02F1/19 ,  G09F9/37 ,  G11C11/00 ,  G11C11/42 ,  G11C13/04 ,  H01H59/00 ,  H01L21/331 ,  H01L21/822 ,  H01L27/04 ,  H01L29/73

Abstract: IMPROVED ELECTROSTATICALLY DEFORMOGRAPHIC SWITCHES This describes a dual electrode electrostatically deflectable deformographic switch. The switch can be driven by co-incidnet voltages and can be made to retain and store information. The switch can be used either as a display or a memory and has a number of engineering advantages, for it is a direct drive display which does not need either vacuum envelopes or electron beam drives. Furthermore, greater efficiencies can be realized and no refresh is necessary since the switch will operate in a standby condition. Also only two voltage levels above ground, i. e., a write voltage and a standby voltage, are required. The switch will enable copiers to be directly driven by computers. The switch can also be used as an optical waveguide transmit/receive switch or an accelerometer. BU-9-80-016