公开(公告)号：DE3572259D1

公开(公告)日：1989-09-14

申请号：DE3572259

申请日：1985-05-29

Applicant: IBM

Inventor： CADE PAUL E ,  EL-KAREH BADIH ,  KIM ICK W

IPC: H01L21/02 ,  H01L21/58 ,  H01L21/74 ,  H01L21/762 ,  H01L21/84 ,  H01L23/58 ,  H01L27/00 ,  H01L27/12 ,  H01L23/56 ,  H01L21/76

Abstract: A method for fabrication of a buried field shield (64) in a semiconductor substrate. A seed substrate is prepared by depositing an epitaxial layer (54) onto a seed wafer (80) and then depositing a heavily doped layer (56) and a thin dielectric (58). The thin dielectric is patterned for contact holes and then a conductive field shield (64) is deposited and patterned. A thick quartz layer (66) is deposited over the field shield and dielectric. A mechanical substrate (68) is anodically bonded to the quartz (66) of the seed substrate and the original seed wafer (80) is etched back to expose the epitaxial layer (54) for further fabrication of integrated electronic devices therein.