公开(公告)号：DE2314422A1

公开(公告)日：1973-11-29

申请号：DE2314422

申请日：1973-03-23

Applicant: IBM

Inventor： CAHILL JOHN GREGORY ,  SHARMA BHIM SAIN ,  MEULEN YDE JOHAN VAN DER

IPC: H01L21/38 ,  H01L21/00 ,  H01L21/365 ,  H01L31/10 ,  H01L31/109 ,  H01L15/02

Abstract: 1411192 Cadmium selenide INTERNANATIONAL BUSINESS MACHINES CORP 8 March 1973 [8 May 1972] 11275/73 Heading C1A [Also in Division H1] A photodiode comprises an N-type layer of CdSe on a P-type Si substrate. Fig. 1 shows apparatus suitable for vapour-depositing the CdSe layer from separate resistively heated sources of Cd 10 and Se 24. Baffles 14, 16 associated with the boat 12 containing the Cd 10 prevent Cd particles from entering the chamber 2, which is evacuated to a pressure of 10 -7 to 10 -8 mm. of mercury. A rotatable shutter 20 regulates the evaporation of Cd on to the target, which consists of Si substrates 8 inserted in recesses in a holder 6 of boron nitride. The source temperatures are controlled such that the ratio of Se : Cd vapour fluxes at the Si substrates 8 is in the range 10-15 : 1, the substrates 8, from which any oxide film has been removed prior to insertion in the apparatus, being maintained at a temperature of about 250‹ C. during deposition.

公开(公告)号：IT8026395D0

公开(公告)日：1980-12-03

申请号：IT2639580

申请日：1980-12-03

Applicant: IBM

Inventor： PENNINGTON KEITH SAMUEL ,  AVIRAM ARI ,  CAHILL JOHN GREGORY ,  HAUGE PETER SWIFT

IPC: B41C1/00 ,  B41C1/10 ,  B41N1/10 ,  B41N1/14 ,  B41N3/03 ,  B41N

公开(公告)号：IT1149864B

公开(公告)日：1986-12-10

申请号：IT2639580

申请日：1980-12-03

Applicant: IBM

Inventor： AVIRAM ARI ,  CAHILL JOHN GREGORY ,  HAUGE PETER SWIFT ,  PENNINGTON KEITH SAMUEL

IPC: B41C1/00 ,  B41C1/10 ,  B41N1/10 ,  B41N1/14 ,  B41N3/03 ,  B41N