公开(公告)号：CA1123683A

公开(公告)日：1982-05-18

申请号：CA362153

申请日：1980-10-10

Applicant: IBM

Inventor： CANAVELLO BENJAMIN J ,  HATZAKIS MICHAEL

IPC: H01L21/027 ,  G03F7/40 ,  B05D1/32 ,  G03F7/16

Abstract: AN IMPROVED IMAGE HARDENING PROCESS Resist images are hardened so that they are flow resistant at elevated temperatures by coating the image with a layer of a porous metal or metal oxide. YO978-026

公开(公告)号：CA1111699A

公开(公告)日：1981-11-03

申请号：CA319302

申请日：1979-01-09

Applicant: IBM

Inventor： CANAVELLO BENJAMIN J ,  HATZAKIS MICHAEL ,  SHAW JANE M

IPC: G03C1/72 ,  G03F7/00 ,  G03F7/022 ,  G03F7/30 ,  G03F7/32 ,  G03F7/38 ,  G03F7/40 ,  H01L21/027 ,  H01L21/30 ,  G03C5/00

Abstract: METHOD OF MODIFYING THE DEVELOPMENT PROFILE OF PHOTORESISTS The cross-sectional profile which is produced upon development of a layer of alkali soluble resin-diazo ketone photoresist is modified by treating the layer with a solvent or solvent mixture which is different from but miscible with the solvent or solvent mixture used to form the resist layer. The treating solvent is believed to dilute the resist solvent in a surface layer portion of the resist thereby modifying the alkaline developer solubility of this portion. Undercut resist profiles may be obtained by this method with normal optical exposure of the resist.