公开(公告)号：DE3072031D1

公开(公告)日：1987-10-22

申请号：DE3072031

申请日：1980-06-03

Applicant: IBM

Inventor： CARPENTER CHARLES ,  FUGARDI JOSEPH F ,  GREGOR LAWRENCE V ,  GROSEWALD PETER SAMUEL ,  REEBER MORTON D

IPC: B23K35/00 ,  H01L21/60 ,  H01L23/532 ,  H01L23/48

Abstract: A ball limiting metallurgy pad structure for a semiconductor device solder bond interconnection comprising: a conductive layer that is adherent to the semiconductor device passivating layer, a relatively thick layer of a material having a high thermal conductivity, a barrier layer that protects the high conductivity layer by physically preventing any interaction or alloying with the subsequent layers, and a layer of a material that is solder wettable.

公开(公告)号：IT1148836B

公开(公告)日：1986-12-03

申请号：IT2250980

申请日：1980-06-03

Applicant: IBM

Inventor： CARPENTER CHARLES ,  FUGARDI JOSEPH F ,  GREGOR LAWRENCE V ,  GROSEWALD SAMUEL PETER ,  REBBER MORTON D

IPC: B23K35/00 ,  H01L21/60 ,  H01L23/532 ,  H01L

Abstract: A ball limiting metallurgy pad structure for a semiconductor device solder bond interconnection comprising: a conductive layer that is adherent to the semiconductor device passivating layer, a relatively thick layer of a material having a high thermal conductivity, a barrier layer that protects the high conductivity layer by physically preventing any interaction or alloying with the subsequent layers, and a layer of a material that is solder wettable.

公开(公告)号：CA1139008A

公开(公告)日：1983-01-04

申请号：CA349744

申请日：1980-04-14

Applicant: IBM

Inventor： CARPENTER CHARLES ,  FUGARDI JOSEPH F ,  GREGOR LAWRENCE V ,  GROSEWALD PETER S ,  REEBER MORTON D

IPC: B23K35/00 ,  H01L21/60 ,  H01L23/532 ,  H05K1/11

Abstract: METHOD OF FORMING AN IMPROVED SOLDER INTERCONNECTION BETWEEN A SEMICONDUCTOR DEVICE AND A SUPPORTING SUBSTRATE A ball limiting metallurgy pad structure for a semiconductor device solder bond interconnection comprises a conductive layer that is adherent to the semiconductor device passivating layer, a relatively thick layer of a material that has a high thermal conductivity, a barrier layer that protects the high conductivity layer by physically preventing it from interacting or alloying with any subsequent layers, and a layer of a material that is solder wettable.