公开(公告)号：DE60314868T2

公开(公告)日：2008-03-13

申请号：DE60314868

申请日：2003-04-18

Applicant: IBM

Inventor： CASTRIOTTA MICHELE ,  OGGIONI STEFANO ,  ROGIANI GIANLUCA ,  SPREAFICO MAURO ,  VIERO GIORGIO

IPC: H05K1/11 ,  H01L23/498 ,  H05K3/46 ,  H01L23/538 ,  H01L23/66 ,  H05K1/02

Abstract: A stacked via structure ( 200 ) adapted to transmit high frequency signals or high intensity current through conductive layers of an electronic device carrier is disclosed. The stacked via structure comprises at least three conductive tracks ( 205 a, 205 b, 205 c) belonging to three adjacent conductive layers ( 110 a, 110 b, 110 c) separated by dielectric layers ( 120 ), aligned according to z axis. Connections between these conductive tracks are done with at least two vias ( 210, 215 ) between each conductive layer. Vias connected to one side of a conductive track are disposed such that they are not aligned with the ones connected to the other side according to z axis.

公开(公告)号：DE60314868D1

公开(公告)日：2007-08-23

申请号：DE60314868

申请日：2003-04-18

Applicant: IBM

Inventor： CASTRIOTTA MICHELE ,  OGGIONI STEFANO ,  ROGIANI GIANLUCA ,  SPREAFICO MAURO ,  VIERO GIORGIO

IPC: H05K1/11 ,  H01L23/498 ,  H05K3/46 ,  H01L23/538 ,  H01L23/66 ,  H05K1/02

Abstract: A stacked via structure ( 200 ) adapted to transmit high frequency signals or high intensity current through conductive layers of an electronic device carrier is disclosed. The stacked via structure comprises at least three conductive tracks ( 205 a, 205 b, 205 c) belonging to three adjacent conductive layers ( 110 a, 110 b, 110 c) separated by dielectric layers ( 120 ), aligned according to z axis. Connections between these conductive tracks are done with at least two vias ( 210, 215 ) between each conductive layer. Vias connected to one side of a conductive track are disposed such that they are not aligned with the ones connected to the other side according to z axis.

公开(公告)号：AT367077T

公开(公告)日：2007-08-15

申请号：AT03787806

申请日：2003-04-18

Applicant: IBM

Inventor： CASTRIOTTA MICHELE ,  OGGIONI STEFANO ,  ROGIANI GIANLUCA ,  SPREAFICO MAURO ,  VIERO GIORGIO

IPC: H05K1/11 ,  H05K3/46 ,  H01L23/498 ,  H01L23/538 ,  H01L23/66 ,  H05K1/02

Abstract: A stacked via structure ( 200 ) adapted to transmit high frequency signals or high intensity current through conductive layers of an electronic device carrier is disclosed. The stacked via structure comprises at least three conductive tracks ( 205 a, 205 b, 205 c) belonging to three adjacent conductive layers ( 110 a, 110 b, 110 c) separated by dielectric layers ( 120 ), aligned according to z axis. Connections between these conductive tracks are done with at least two vias ( 210, 215 ) between each conductive layer. Vias connected to one side of a conductive track are disposed such that they are not aligned with the ones connected to the other side according to z axis.

公开(公告)号：AU2003276277A1

公开(公告)日：2004-03-03

申请号：AU2003276277

申请日：2003-04-18

Applicant: IBM

Inventor： CASTRIOTTA MICHELE ,  OGGIONI STEFANO ,  ROGIANI GIANLUCA ,  SPREAFICO MAURO ,  VIERO GIORGIO

IPC: H05K3/46 ,  H01L23/498 ,  H01L23/538 ,  H01L23/66 ,  H05K1/02 ,  H05K1/11

Abstract: A stacked via structure ( 200 ) adapted to transmit high frequency signals or high intensity current through conductive layers of an electronic device carrier is disclosed. The stacked via structure comprises at least three conductive tracks ( 205 a, 205 b, 205 c) belonging to three adjacent conductive layers ( 110 a, 110 b, 110 c) separated by dielectric layers ( 120 ), aligned according to z axis. Connections between these conductive tracks are done with at least two vias ( 210, 215 ) between each conductive layer. Vias connected to one side of a conductive track are disposed such that they are not aligned with the ones connected to the other side according to z axis.