4.
    发明专利
    未知

    公开(公告)号:DE60314868T2

    公开(公告)日:2008-03-13

    申请号:DE60314868

    申请日:2003-04-18

    Applicant: IBM

    Abstract: A stacked via structure ( 200 ) adapted to transmit high frequency signals or high intensity current through conductive layers of an electronic device carrier is disclosed. The stacked via structure comprises at least three conductive tracks ( 205 a, 205 b, 205 c) belonging to three adjacent conductive layers ( 110 a, 110 b, 110 c) separated by dielectric layers ( 120 ), aligned according to z axis. Connections between these conductive tracks are done with at least two vias ( 210, 215 ) between each conductive layer. Vias connected to one side of a conductive track are disposed such that they are not aligned with the ones connected to the other side according to z axis.

    5.
    发明专利
    未知

    公开(公告)号:DE60314868D1

    公开(公告)日:2007-08-23

    申请号:DE60314868

    申请日:2003-04-18

    Applicant: IBM

    Abstract: A stacked via structure ( 200 ) adapted to transmit high frequency signals or high intensity current through conductive layers of an electronic device carrier is disclosed. The stacked via structure comprises at least three conductive tracks ( 205 a, 205 b, 205 c) belonging to three adjacent conductive layers ( 110 a, 110 b, 110 c) separated by dielectric layers ( 120 ), aligned according to z axis. Connections between these conductive tracks are done with at least two vias ( 210, 215 ) between each conductive layer. Vias connected to one side of a conductive track are disposed such that they are not aligned with the ones connected to the other side according to z axis.

    6.
    发明专利
    未知

    公开(公告)号:AT367077T

    公开(公告)日:2007-08-15

    申请号:AT03787806

    申请日:2003-04-18

    Applicant: IBM

    Abstract: A stacked via structure ( 200 ) adapted to transmit high frequency signals or high intensity current through conductive layers of an electronic device carrier is disclosed. The stacked via structure comprises at least three conductive tracks ( 205 a, 205 b, 205 c) belonging to three adjacent conductive layers ( 110 a, 110 b, 110 c) separated by dielectric layers ( 120 ), aligned according to z axis. Connections between these conductive tracks are done with at least two vias ( 210, 215 ) between each conductive layer. Vias connected to one side of a conductive track are disposed such that they are not aligned with the ones connected to the other side according to z axis.

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