公开(公告)号：EP2283515A4

公开(公告)日：2014-10-22

申请号：EP09759016

申请日：2009-05-22

Applicant: IBM

Inventor： FILIPPI RONALD ,  CHANDRA KAUSHIK ,  SANKARAN SUJATHA ,  HU CHAO-KUN ,  STANDAERT THEODORUS ,  GRUNOW STEPHAN ,  SIMON ANDREW H

IPC: H01L23/528 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L23/528 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An interconnect structure for an integrated circuit (IC) device includes an elongated, electrically conductive line comprising one or more segments formed at a first width, w1, and one or more segments formed at one or more additional widths, w2 . . . wN, with the first width being narrower than each of the one or more additional widths; wherein the relationship of the total length, L1, of the one or more conductive segments formed at the first width to the total lengths, L2 . . . LN, of the one or more conductive segments formed at the one or more additional widths is selected such that, for a given magnitude of current carried by the conductive line, a critical length with respect to an electromigration short-length effect benefit is maintained such that a total length of the conductive line, L=L1+L2+ . . . +LN, meets a minimum desired design length regardless of the critical length.