公开(公告)号：JP2001274393A

公开(公告)日：2001-10-05

申请号：JP2001047192

申请日：2001-02-22

Applicant: IBM

Inventor： GOUSEV EVGENI ,  CHEN KAI ,  RAY ASIT KUMAR

IPC: H01L29/78 ,  H01L21/28 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/51

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a thermally stable CMOS device having a gate dielectric structure functioning as a dopant barrier. SOLUTION: The method includes a step for forming a dielectric layer in a region of a silicon substrate, a step for implanting nitrogen atoms in the dielectric layer; a step for forming a polycrystalline silicon conductive layer on the dielectric layer; a step for driving nitrogen atoms by annealing in the dielectric layer, and forming a gate dielectric as a dielectric layer with an interface of silicon nitride layer between the dielectric layer and the silicon substrate, and between the dielectric layer and the polycrystalline silicon layer, and a step for forming the gate structure in the polycrystalline silicon layer, forming a source/drain region in the silicon substrate, and aligning the source/ drain region with the gate structure.