公开(公告)号：JP2001274393A

公开(公告)日：2001-10-05

申请号：JP2001047192

申请日：2001-02-22

Applicant: IBM

Inventor： GOUSEV EVGENI ,  CHEN KAI ,  RAY ASIT KUMAR

IPC: H01L29/78 ,  H01L21/28 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/51

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a thermally stable CMOS device having a gate dielectric structure functioning as a dopant barrier. SOLUTION: The method includes a step for forming a dielectric layer in a region of a silicon substrate, a step for implanting nitrogen atoms in the dielectric layer; a step for forming a polycrystalline silicon conductive layer on the dielectric layer; a step for driving nitrogen atoms by annealing in the dielectric layer, and forming a gate dielectric as a dielectric layer with an interface of silicon nitride layer between the dielectric layer and the silicon substrate, and between the dielectric layer and the polycrystalline silicon layer, and a step for forming the gate structure in the polycrystalline silicon layer, forming a source/drain region in the silicon substrate, and aligning the source/ drain region with the gate structure.

公开(公告)号：DE3060785D1

公开(公告)日：1982-10-28

申请号：DE3060785

申请日：1980-01-23

Applicant: IBM

Inventor： RAY ASIT KUMAR ,  REISMAN ARNOLD

IPC: H01L21/31 ,  C23C8/36 ,  H01L21/316 ,  H01J37/32

Abstract: Uniform growth of oxide at low temperature can be performed in a plasma environment by positioning the substrates on which the oxide is to grow outside of the plasma area and independently supplying heat to the substrates in the presence of controlled oxygen pressure.

公开(公告)号：DE3563985D1

公开(公告)日：1988-09-01

申请号：DE3563985

申请日：1985-04-30

Applicant: IBM

Inventor： RAY ASIT KUMAR

IPC: C04B41/50 ,  C04B41/87 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  C23C4/10 ,  C23C14/10 ,  H01L21/203

Abstract: A layer of insulating material is preformed on one face (10) of an electrically conductive or semiconductive substrate (6) prior to gas plasma deposition of a film of insulating material on the other face (9) of the substrate. Indulating films are formed much more slowly in a gas plasma than on bare substrates and, after an initial fast growth phase, the insulator thickmess reaches a steady growth phase. Beacuse of the resulting slower rate of insulator formation, control of the desired insulator thickness is easy and it is even easier if the desired insulator thickness is close to the steady growth phase.

公开(公告)号：DE3172105D1

公开(公告)日：1985-10-10

申请号：DE3172105

申请日：1981-03-24

Applicant: IBM

Inventor： RAY ASIT KUMAR ,  REISMAN ARNOLD

IPC: H01J37/32 ,  B01J19/08 ,  C23C8/36 ,  C23C14/08 ,  H01L21/31 ,  H01L21/316 ,  C23C8/12

Abstract: Uniform plasma oxidation of the surface (11) of a substrate (9) is achieved by placing the substrate surface perpendicular to the plasma flow in a region at a pressure of at least about 10 mtorr such that the surface (11) faces away from the plasma.