公开(公告)号：JP2001274393A

公开(公告)日：2001-10-05

申请号：JP2001047192

申请日：2001-02-22

Applicant: IBM

Inventor： GOUSEV EVGENI ,  CHEN KAI ,  RAY ASIT KUMAR

IPC: H01L29/78 ,  H01L21/28 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/51

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a thermally stable CMOS device having a gate dielectric structure functioning as a dopant barrier. SOLUTION: The method includes a step for forming a dielectric layer in a region of a silicon substrate, a step for implanting nitrogen atoms in the dielectric layer; a step for forming a polycrystalline silicon conductive layer on the dielectric layer; a step for driving nitrogen atoms by annealing in the dielectric layer, and forming a gate dielectric as a dielectric layer with an interface of silicon nitride layer between the dielectric layer and the silicon substrate, and between the dielectric layer and the polycrystalline silicon layer, and a step for forming the gate structure in the polycrystalline silicon layer, forming a source/drain region in the silicon substrate, and aligning the source/ drain region with the gate structure.

公开(公告)号：JP2003142483A

公开(公告)日：2003-05-16

申请号：JP2002212018

申请日：2002-07-22

Applicant: IBM

Inventor： GOUSEV EVGENI ,  AJMERA ATUL C ,  D EMIC CHRISTOPHER P

IPC: H01L21/318 ,  H01L21/28 ,  H01L21/314 ,  H01L29/51 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To provide a method of forming an extremely thin gate dielectric for an integrated circuit device. SOLUTION: This method comprises steps of forming a nitride layer on a substrate by heating a silicon substrate 200 for a short time in the presence of an ammonia gas and reoxidizing the nitride layer to form an oxynitride layer 204 by heating the nitride layer for a short time in the presence of an nitrogen oxide gas. The oxynitride layer has nitrogen concentration of about 1.0×10 atoms/cm to about 6.0×10 atoms/cm , and a thickness limited in the range of less than 10 Å. The step of forming the nitride layer includes a step of heating a substrate for a short time in the presence of an ammonia gas with a temperature of about 650-1,000 deg.C and pressure of about 7.50×10 Pa to about 5.70 Pa. The step of reoxidizing the nitride layer includes a step of heating the nitride layer for a short time in the presence of a nitrogen oxide gas with a temperature of about 650-1,000 deg.C and pressure of about 7.50×10 Pa to about 5.70 Pa.

公开(公告)号：WO2005031809A3

公开(公告)日：2005-06-23

申请号：PCT/EP2004052283

申请日：2004-09-23

Applicant: IBM ,  IBM UK ,  GOUSEV EVGENI ,  SHANG HUILING ,  D EMIC CHRISTOPHER ,  KOZLOWSKI PAUL

Inventor： GOUSEV EVGENI ,  SHANG HUILING ,  D EMIC CHRISTOPHER ,  KOZLOWSKI PAUL

IPC: H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L29/51 ,  H01L29/772

CPC classification number: H01L21/28202 ,  H01L21/02247 ,  H01L21/02326 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/28255 ,  H01L21/3143 ,  H01L21/31658 ,  H01L21/318 ,  H01L29/518 ,  Y10S438/906 ,  Y10S438/933

Abstract: A method for producing thin, below 6nm of equivalent oxide thickness, germanium oxynitride layer on Ge-based materials for use as gate dielectric is disclosed. The method involves a two step process. First, nitrogen is incorporated in a surface layer of the Ge-based material. Second, the nitrogen incorporation is followed by an oxidation step. The method yields excellent thickness control of high quality gate dielectrics for Ge-based field effect devices, such as MOS transistors. Structures of devices having the thin germanium oxynitride gate dielectric and processors made with such devices are disclosed, as well.

Abstract translation: 公开了一种用作栅极电介质的Ge基材料上产生6nm以下等效氧化物厚度薄的锗氮氧化物层的方法。 该方法涉及两步法。 首先，在Ge基材料的表层中加入氮。 其次，氮掺入之后是氧化步骤。 该方法为基于Ge的场效应器件（例如MOS晶体管）的高质量栅极电介质产生优异的厚度控制。 还公开了具有薄氮氧化锗栅电介质的器件的结构和用这种器件制造的处理器。

公开(公告)号：JP2005328059A

公开(公告)日：2005-11-24

申请号：JP2005139334

申请日：2005-05-12

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： BOJARCZUK NESTOR A JR ,  CARTIER EDUARD A ,  FRANK MARTIN M ,  GOUSEV EVGENI ,  SUPURATEIKU GUUHA ,  NARAYANAN VIJAY

IPC: H01L21/8234 ,  H01L21/28 ,  H01L21/8238 ,  H01L27/088 ,  H01L27/092 ,  H01L29/49 ,  H01L29/51 ,  H01L29/76 ,  H01L29/78 ,  H01L29/786 ,  H01L51/00 ,  H01L51/05

CPC classification number: H01L21/28202 ,  H01L21/28194 ,  H01L21/823857 ,  H01L29/4916 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

Abstract: PROBLEM TO BE SOLVED: To provide a complementary metal-oxide semiconductor (CMOS) structure including an intermediate layer between a Si-containing gate electrode and a high-k gate dielectric, so that a threshold voltage and a flat-band voltage of the structure are stabilized.
SOLUTION: An insulating intermediate layer for use in the complementary metal-oxide semiconductor (CMOS) is provided in order to prevent undesirable shifts of the threshold voltage and the flat-band voltage. The insulating intermediate layer is disposed between a gate dielectric having a dielectric constant of more than 4.0 and a Si-containing gate conductor. The insulating intermediate layer comprises metal nitride capable of containing oxygen, and stabilizes the threshold voltage and the flat-band voltage. For a preferred embodiment, the insulating intermediate layer comprises aluminum nitride or aluminum oxinitride, and the gate dielectric comprises a hafnium oxide, hafnium silicate, or hafnium oxinitride. The structure is especially useful for stabilizing the threshold voltage and the flat-band voltage of a p-type field effect transistor.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：为了提供在含Si栅极电极和高k栅极电介质之间包括中间层的互补金属氧化物半导体（CMOS）结构，使得阈值电压和平带电压 的结构是稳定的。 解决方案：提供用于互补金属氧化物半导体（CMOS）的绝缘中间层，以便防止阈值电压和平带电压的不希望的偏移。 绝缘中间层设置在介电常数大于4.0的栅极电介质和含Si的栅极导体之间​​。 绝缘中间层包括能够含有氧的金属氮化物，稳定阈值电压和平带电压。 对于优选实施例，绝缘中间层包括氮化铝或氮氧化铝，栅极电介质包括氧化铪，硅酸铪或氧化铪。 该结构对于稳定p型场效应晶体管的阈值电压和平带电压特别有用。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：WO2008055150A3

公开(公告)日：2008-06-19

申请号：PCT/US2007082988

申请日：2007-10-30

Applicant: IBM ,  ADAMS EDWARD DENNIS ,  BURNHAM JAY SANFORD ,  GOUSEV EVGENI ,  NAKOS JAMES SPIROS ,  PREUSS HEATHER ELIZABETH ,  SHEPARD JOSEPH FRANCIS

Inventor： ADAMS EDWARD DENNIS ,  BURNHAM JAY SANFORD ,  GOUSEV EVGENI ,  NAKOS JAMES SPIROS ,  PREUSS HEATHER ELIZABETH ,  SHEPARD JOSEPH FRANCIS

IPC: H01L21/31

CPC classification number: H01L21/3144 ,  H01L21/28202

Abstract: A method of forming a nitrided silicon oxide layer. The method includes: forming a silicon dioxide layer on a surface (32) of a silicon substrate (30); performing a rapid thermal nitridation of the silicon dioxide layer at a temperature of less than or equal to about 900 °C and a pressure greater than about 500 Torr to form an initial nitrided silicon oxide layer; and performing a rapid thermal oxidation or anneal of the initial nitrided silicon oxide layer at a temperature of less than or equal to about 900 °C and a pressure greater than about 500 Torr to form a nitrided silicon oxide layer (34). Also a method of forming a MOSFET with a nitrided silicon oxide dielectric layer (34).

Abstract translation: 形成氮化硅氧化物层的方法。 该方法包括：在硅衬底（30）的表面（32）上形成二氧化硅层; 在小于或等于约900℃的温度和大于约500托的压力下进行二氧化硅层的快速热氮化，以形成初始氮化氧化硅层; 并且在小于或等于约900℃的温度和大于约500托的压力下进行初始氮化硅氧化物层的快速热氧化或退火以形成氮化二氧化硅层（34）。 还有一种用氮化硅氧化物介电层（34）形成MOSFET的方法。

公开(公告)号：WO2005013348A3

公开(公告)日：2005-09-22

申请号：PCT/US2004024595

申请日：2004-07-30

Applicant: TOKYO ELECTRON LTD ,  IBM ,  O'MEARA DAVID L ,  WAJDA CORY ,  DIP ANTHONY ,  TOELLER MICHAEL ,  FURUKAWA TOSHIHARA ,  SCHEER KRISTEN ,  CALLEGARI ALESSANDRO ,  BUEHRER FRED ,  ZAFAR SUFI ,  GOUSEV EVGENI ,  CHOU ANTHONY ,  HIGGINS PAUL

Inventor： O'MEARA DAVID L ,  WAJDA CORY ,  DIP ANTHONY ,  TOELLER MICHAEL ,  FURUKAWA TOSHIHARA ,  SCHEER KRISTEN ,  CALLEGARI ALESSANDRO ,  BUEHRER FRED ,  ZAFAR SUFI ,  GOUSEV EVGENI ,  CHOU ANTHONY ,  HIGGINS PAUL

IPC: H01L21/00 ,  H01L21/314 ,  H01L21/316 ,  C23C16/30 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01L21/318

CPC classification number: H01L21/67098 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/3144 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31662

Abstract: Ultra-thin oxide and oxynitride layers are formed utilizing low pressure processing to achieve self-limiting oxidation of substrates and provide ultra-thin oxide and oxynitride. The substrates to be processed can contain an initial dielectric layer such as an oxide layer, an oxynitride layer, a nitride layer, a high-k layer, or alternatively can lack an initial dielectric layer. The processing can be carried out using a batch type process chamber or, alternatively, using a single-wafer process chamber. One embodiment of the invention provides self-limiting oxidation of Si-substrates that results in Si02 layers with a thickness of about 15Å, where the thickness of the Si02 layers varies less than about 1 Åover the substrates.

Abstract translation: 使用低压处理形成超薄氧化物和氮氧化物层以实现衬底的自限氧化并提供超薄氧化物和氮氧化物。 待处理的衬底可以包含诸如氧化物层，氮氧化物层，氮化物层，高k层的初始电介质层，或者可替代地可以缺少初始电介质层。 该处理可以使用批量式处理室或者使用单晶片处理室来进行。 本发明的一个实施方案提供了Si-衬底的自限氧化，其导致厚度为约的SiO 2层，其中SiO 2层的厚度在衬底上的变化小于约1。