公开(公告)号：DE68901980T2

公开(公告)日：1993-02-25

申请号：DE68901980

申请日：1989-01-19

Applicant: IBM

Inventor： CHAUDHARI PRAVEEN ,  CHI CHENG-CHUNG JOHN ,  DIMOS DUANE BRIAN ,  MANNHARDT JOCHEN DIETER ,  TSUEI CHANG CHYI

IPC: B32B18/00 ,  C01G1/00 ,  C04B41/87 ,  H01B13/00 ,  H01L39/22 ,  H01L39/24

Abstract: High-Tc superconducting devices are described in which controlled grain boundaries (GB) in a layer (12) of the superconductors form a weak link or barrier between superconducting grains (A, B) of the layer (12). A method is described for reproducibly fabricating these devices, including first preparing a substrate (10) to include at least one grain boundary (GB) therein. A high-Tc superconductor layer (12) is then epitaxially deposited on the substrate (10) in order to produce a corresponding grain boundary (GB) in the superconducting layer (12). This superconducting layer (12) is then patterned to leave at least two regions on either side of the grain boundary (GB), the two regions functioning as contact areas for a barrier device including the grain boundary (GB) as a current flow barrier. Electrical contacts (16) can be made to the superconducting regions (A, B) so that bias currents can be produced across the grain boundary (GB) which acts as a tunnel barrier or weak link connection.

公开(公告)号：DE69115119D1

公开(公告)日：1996-01-18

申请号：DE69115119

申请日：1991-02-12

Applicant: IBM

Inventor： CHI CHENG-CHUNG JOHN ,  KLEINSASSER ALAN WILLIS

IPC: H01L39/22 ,  H01L39/14 ,  H01L39/24

Abstract: A high Tc oxide superconductive switching device [10] formed on a substantially planar substrate [18] includes a base electrode [12] comprised of a layer or film of anisotropic superconducting material. The layer has a first crystalline axis [c] along which a magnitude of an energy gap of the material is less than an energy gap of the material along other crystalline axes. The superconductive switching device further includes at least one injector electrode [14] forming a planar [16] or an edge (36) tunneling junction with the base electrode (12) for injecting, under the influence of a bias potential eV, quasiparticles into the base electrode. The first crystalline axis is aligned in a predetermined manner with the tunneling junction for optimizing a quasiparticle injection efficiency of the tunneling junction.

公开(公告)号：DE68901980D1

公开(公告)日：1992-08-13

申请号：DE68901980

申请日：1989-01-19

Applicant: IBM

Inventor： CHAUDHARI PRAVEEN ,  CHI CHENG-CHUNG JOHN ,  DIMOS DUANE BRIAN ,  MANNHARDT JOCHEN DIETER ,  TSUEI CHANG CHYI

IPC: B32B18/00 ,  C01G1/00 ,  C04B41/87 ,  H01B13/00 ,  H01L39/22 ,  H01L39/24

Abstract: High-Tc superconducting devices are described in which controlled grain boundaries (GB) in a layer (12) of the superconductors form a weak link or barrier between superconducting grains (A, B) of the layer (12). A method is described for reproducibly fabricating these devices, including first preparing a substrate (10) to include at least one grain boundary (GB) therein. A high-Tc superconductor layer (12) is then epitaxially deposited on the substrate (10) in order to produce a corresponding grain boundary (GB) in the superconducting layer (12). This superconducting layer (12) is then patterned to leave at least two regions on either side of the grain boundary (GB), the two regions functioning as contact areas for a barrier device including the grain boundary (GB) as a current flow barrier. Electrical contacts (16) can be made to the superconducting regions (A, B) so that bias currents can be produced across the grain boundary (GB) which acts as a tunnel barrier or weak link connection.