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    SINGLE AXIS COMBINED ION AND VAPOUR SOURCE
    1.
    发明专利
    SINGLE AXIS COMBINED ION AND VAPOUR SOURCE 未知

    公开(公告)号：DE3477711D1

    公开(公告)日：1989-05-18

    申请号：DE3477711

    申请日：1984-04-25

    Applicant: IBM

    Inventor： HARPER JAMES MCKELL EDWIN ,  KLEINSASSER ALAN WILLIS

    IPC: H01L21/31 ,  C23C14/22 ,  C23C14/54 ,  H01J37/08 ,  H01J37/305 ,  H01L21/203 ,  H01L39/24 ,  H01J37/32 ,  C23C14/00 ,  H01J27/08

    Abstract: An ion chamber 1 houses a crucible anode 2 containing ion source material 3 and connected to a positive power supply. A cathode 5 is heated by current from source 7 and an electric field is established between the cathode and anode by voltage source 6. A DC bias is established by second voltage source 11. A second anode 15 is connected to the anode 2 by variable resistor 16. The chamber 1 is covered by a DC biassed grid 12 and is filled with ionizable gas via inlet 40. … By varying the resistor 16 from a low value to a high value the cathode/anode current can be shifted from the auxiliary anode 15 to the crucible anode 2 thereby varying the rate of evaporation of the source material. This gives rise to an evaporant stream 8. At the same time the gas is ionized to form an ion beam 14.

    4.
    发明专利
    未知

    公开(公告)号：DE69115119D1

    公开(公告)日：1996-01-18

    申请号：DE69115119

    申请日：1991-02-12

    Applicant: IBM

    Inventor： CHI CHENG-CHUNG JOHN ,  KLEINSASSER ALAN WILLIS

    IPC: H01L39/22 ,  H01L39/14 ,  H01L39/24

    Abstract: A high Tc oxide superconductive switching device [10] formed on a substantially planar substrate [18] includes a base electrode [12] comprised of a layer or film of anisotropic superconducting material. The layer has a first crystalline axis [c] along which a magnitude of an energy gap of the material is less than an energy gap of the material along other crystalline axes. The superconductive switching device further includes at least one injector electrode [14] forming a planar [16] or an edge (36) tunneling junction with the base electrode (12) for injecting, under the influence of a bias potential eV, quasiparticles into the base electrode. The first crystalline axis is aligned in a predetermined manner with the tunneling junction for optimizing a quasiparticle injection efficiency of the tunneling junction.

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