公开(公告)号：JP2011043852A

公开(公告)日：2011-03-03

申请号：JP2010245968

申请日：2010-11-02

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： ASSEFA SOLOMON ,  CHRISTOPHER YANES ,  VLASOV YURII

IPC: G02B6/122 ,  G02B6/42

CPC classification number: G02B6/30 ,  B82Y20/00 ,  G02B6/1223

Abstract: PROBLEM TO BE SOLVED: To provide a CMOS-compatible integrated dielectric optical waveguide coupler, and to provide an apparatus for fabrication thereof. SOLUTION: Integrated circuits are fabricated with an integral optical coupling transition to efficiently couple optical energy from an optical fiber to an integrated optical waveguide on the integrated circuit. Layers of specific materials are deposited onto a semiconductor circuit to support etching of a trench to receive an optical coupler that performs proper impedance matching between an optical fiber and an on-circuit optical waveguide that extends part way into the transition channel. A silicon based dielectric that includes at least a portion with a refractive index substantially equal to a section of the optical fiber is deposited into the etched trench to create the optical coupler. Silicon-based dielectrics with graded indices are also able to be used. Chemical mechanical polishing is used to finalize preparation of the optical transition and integrated circuit. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种CMOS兼容的集成电介质光波导耦合器，并提供其制造装置。 解决方案：集成电路采用集成光耦合转换制造，以有效地将光能从光纤耦合到集成电路上的集成光波导。 特定材料的层被沉积到半导体电路上以支持蚀刻沟槽以接收光纤耦合器，该光耦合器在光纤和部分地延伸到过渡通道中的在线光波导之间执行适当的阻抗匹配。 包括折射率基本上等于光纤的一部分的至少一部分的硅基电介质被沉积到蚀刻沟槽中以产生光耦合器。 也可以使用具有分级指数的硅基电介质。 化学机械抛光用于完成光学转换和集成电路的准备。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010015121A

公开(公告)日：2010-01-21

申请号：JP2008259518

申请日：2008-10-06

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： ASSEFA SOLOMON ,  CHRISTOPHER YANES ,  VLASOV YURII

IPC: G02B6/13

CPC classification number: G02B6/30 ,  B82Y20/00 ,  G02B6/1223

Abstract: PROBLEM TO BE SOLVED: To provide a CMOS compatible integrated dielectric optical waveguide coupler and a fabrication method therefor. SOLUTION: An optoelectronic circuit fabrication method and an integrated circuit manufacturing apparatus fabricated therewith are provided. Integrated circuits are fabricated with an integral optical coupling transition to efficiently couple optical energy from an optical fiber to an integrated optical waveguide on the integrated circuit. Layers of specific materials are deposited onto a semiconductor circuit to support etching of a trench to receive an optical coupler that performs proper impedance matching between an optical fiber and an on-circuit optical waveguide that extends part way into the transition channel. A silicon based dielectric that includes at least a portion with an refractive index substantially equal to a section of the optical fiber is deposited into the etched trench to create the optical coupler. Silicon based dielectrics with graded indices are also able to be used. Chemical mechanical polishing is used to finalize preparation of the optical transition and integrated circuit. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种CMOS兼容的集成电介质光波导耦合器及其制造方法。 提供了一种光电子电路制造方法及其制造的集成电路制造装置。 集成电路采用集成光耦合过渡制造，以有效地将光能从光纤耦合到集成电路上的集成光波导。 特定材料的层被沉积到半导体电路上以支持蚀刻沟槽以接收光纤耦合器，该光耦合器在光纤和部分地延伸到过渡通道中的在线光波导之间执行适当的阻抗匹配。 至少包括折射率基本上等于光纤的一部分的部分的硅基电介质被沉积到蚀刻沟槽中以产生光耦合器。 也可以使用具有分级指数的硅基电介质。 化学机械抛光用于完成光学转换和集成电路的准备。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JPH118248A

公开(公告)日：1999-01-12

申请号：JP14913698

申请日：1998-05-29

Applicant: IBM

Inventor： CATHERINA E BAVICH ,  ALESSANDRO CESARE CALLEGARI ,  JULIEN FONTAINE ,  ALFRED GRILL ,  CHRISTOPHER YANES ,  BISHUNUBAHAAI VITTARUBAHAAI PA

IPC: H01L21/3205 ,  C23C16/26 ,  C23C16/30 ,  G03F7/09 ,  H01L21/027 ,  H01L21/311 ,  H01L21/312

Abstract: PROBLEM TO BE SOLVED: To eliminate the reflection of the boundary surface between a resist and an ARC and to drastically improve CD control by making an adjustment for conforming to the optical characteristics of a substrate, and make it useful as a bottom antireflection coating. SOLUTION: A plasma reinforced chemical vapor phase adhesion device 8, used for adhering an amorphous carbon film, includes a reaction chamber 10 and has a throttle valve 11 for isolating the reaction chamber 10 from a vacuum pump. A cathode 19 is electrically connected to an adjustable high-frequency power supply 14, and the impedance between the cathode 19 and the high-frequency power supply 14 is matched by a matching box 13. An amorphous carbon film coating changes the optical constant of the film by changing the process parameters, thus minimizing a reflection factor on the boundary surface between the resist and the substrate and reducing a swing ratio.