公开(公告)号：JPH118248A

公开(公告)日：1999-01-12

申请号：JP14913698

申请日：1998-05-29

Applicant: IBM

Inventor： CATHERINA E BAVICH ,  ALESSANDRO CESARE CALLEGARI ,  JULIEN FONTAINE ,  ALFRED GRILL ,  CHRISTOPHER YANES ,  BISHUNUBAHAAI VITTARUBAHAAI PA

IPC: H01L21/3205 ,  C23C16/26 ,  C23C16/30 ,  G03F7/09 ,  H01L21/027 ,  H01L21/311 ,  H01L21/312

Abstract: PROBLEM TO BE SOLVED: To eliminate the reflection of the boundary surface between a resist and an ARC and to drastically improve CD control by making an adjustment for conforming to the optical characteristics of a substrate, and make it useful as a bottom antireflection coating. SOLUTION: A plasma reinforced chemical vapor phase adhesion device 8, used for adhering an amorphous carbon film, includes a reaction chamber 10 and has a throttle valve 11 for isolating the reaction chamber 10 from a vacuum pump. A cathode 19 is electrically connected to an adjustable high-frequency power supply 14, and the impedance between the cathode 19 and the high-frequency power supply 14 is matched by a matching box 13. An amorphous carbon film coating changes the optical constant of the film by changing the process parameters, thus minimizing a reflection factor on the boundary surface between the resist and the substrate and reducing a swing ratio.

公开(公告)号：SG115320A1

公开(公告)日：2005-10-28

申请号：SG1998001197

申请日：1998-06-04

Applicant: IBM

Inventor： KATHERINA E BABICH ,  ALESSANDRO CESARE CALLEGARI ,  JULIEN FONTAINE ,  ALFRED GRILL ,  CHRISTOPHER JAHNES ,  VISHNUBHAI VITTHALBHAI PATEL

IPC: H01L21/3205 ,  C23C16/26 ,  C23C16/30 ,  G03F7/09 ,  H01L21/027 ,  H01L21/311 ,  H01L21/312

Abstract: Disclosed is vapor deposited BARC and method of preparing tunable and removable antireflective coatings based on amorphous carbon films. These films can be hydrogenated, fluorinated, nitrogenated carbon films. Such films have an index of refraction and an extinction coefficient tunable from about 1.4 to about 2.1 and from about 0.1 to about 0.6, respectively, at UV and DUV wavelengths, in particular 365, 248 and 193 nm. Moreover, the films produced by the present invention can be deposited over device topography with high conformality, and they are etchable by oxygen and/or a fluoride ion etch process. Because of their unique properties, these films can be used to form a tunable and removable antireflective coating at UV and DUV wavelengths to produce near zero reflectance at the resist/BARC coating interface. This BARC greatly improves performance of semiconductor chips.