公开(公告)号：WO0173841A2

公开(公告)日：2001-10-04

申请号：PCT/EP0102797

申请日：2001-03-13

Applicant: IBM ,  IBM DEUTSCHLAND

Inventor： CLAVENGER LAWRENCE A ,  NAEEM MUNIR D

IPC: H01L23/52 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/528

CPC classification number: H01L21/76892 ,  H01L21/76885 ,  H01L23/528 ,  H01L2924/0002 ,  Y10T428/24777 ,  Y10T428/24917 ,  Y10T428/24975 ,  H01L2924/00

Abstract: A method of preventing or at least reducing the likelihood of bridging (20) between adjacent micro-scale polycrystalline structures, and particularly to reducing electrical shorting between adjacent metallization lines of a microcircuit. The method generally entails forming a multilayer structure that comprises a polycrystalline layer (12) and at least one constraining layer (14), and then patterning the multilayer structure to yield a first line (16) and a second line (18) that is narrower in width than the first line. The first line has a patterned edge (24) that is spaced apart from a patterned edge (26) of the second line, so that the first and second lines are electrically insulated from each other. One or more features associated with the first line are then formed that prevent bridging between the first and second lines if excessive lateral grain growth subsequently occurs along the patterned edge of the first line.

Abstract translation: 防止或至少降低在相邻微尺度多晶结构之间桥接（20）的可能性的方法，特别是减少微电路的相邻金属化线之间的电短路的方法。 该方法通常需要形成包括多晶层（12）和至少一个约束层（14）的多层结构，然后构图多层结构以产生更窄的第一线（16）和第二线（18） 宽度比第一行。 第一线具有与第二线的图案化边缘（26）间隔开的图案化边缘（24），使得第一和第二线路彼此电绝缘。 然后形成与第一线相关联的一个或多个特征，如果沿着第一线的图案化边缘发生过多的横向晶粒生长，则防止第一和第二线之间的桥接。

公开(公告)号：JP2000150520A

公开(公告)日：2000-05-30

申请号：JP29239599

申请日：1999-10-14

Applicant: IBM ,  SIEMENS AG

Inventor： CICHY HOLMER U ,  CLAVENGER LAWRENCE A ,  FILIPPI RONALD G ,  IGGULDEN ROY C ,  RESTAINO DARRYL D ,  RODBELL KENNETH P ,  WEBER STEFAN J ,  WEIGAND PETER

IPC: H01L23/52 ,  H01L21/28 ,  H01L21/3205 ,  H01L23/532 ,  H01L27/02

Abstract: PROBLEM TO BE SOLVED: To obtain an interconnection part for an integrated circuit with improved electromigration characteristics. SOLUTION: An interconnection structure part includes titanium lower and upper layers 14 and 20, and the two titanium layers differ from each other in cleanliness. In order to improve electromigration, and to strongly obtain an intermediate layer 18 with texture, the titanium lower layer 14 is not relatively contaminated, and contains a contaminant of at most 5 wt.%. The intermediate layer 18 containing aluminum is formed between the titanium lower and upper layers 14 and 20. The titanium upper layer 20 is relatively more contaminated as compared with the titanium lower layer 14, contains a contaminant of more than 5 wt.%, and contributes to the maintenance of low area resistance.

公开(公告)号：DE60143472D1

公开(公告)日：2010-12-30

申请号：DE60143472

申请日：2001-03-13

Applicant: IBM

Inventor： CLAVENGER LAWRENCE A ,  NAEEM MUNIR D

IPC: H01L21/768 ,  H01L23/52 ,  H01L21/3205 ,  H01L23/528 ,  H01L23/532