公开(公告)号：JP2000100822A

公开(公告)日：2000-04-07

申请号：JP26415999

申请日：1999-09-17

Applicant: IBM ,  SIEMENS AG

Inventor： CLEVENGER LARRY ,  FILIPPI JR RONALD G ,  GAMBINO JEFFREY ,  GIGNAC LYNNE ,  HURD JEFFERY L ,  HOINKIS MARK ,  IGGULDEN ROY C ,  MEHTER EBRAHIM ,  RODBELL KENNETH P ,  SCHNABEL FLORIAN ,  WEBER STEFAN J

IPC: H01L23/52 ,  H01L21/283 ,  H01L21/3205 ,  H01L21/768

Abstract: PROBLEM TO BE SOLVED: To limit the forming quantity of an inter-metallic compound by sticking a wetting layer containing first metal which is brought into contact with an insulator to a recessed part, a uniform barrier layer on it, and a second metallic conduction layer on it at a temperature which is lower than that, at which the inter-metal compound is generated by means of diffusing first and second metals on the barrier layer. SOLUTION: Barrier layers 20 of nonreactive compounds are formed on wetting layers 18, where the metal of titanium(Ti) is evaporated by CVD on the sidewalls of the recessed parts 12 of an insulating layer 10 on the substrate 11 of a silicon water. The barrier layers 20 are formed of an arbitrary material, whose diffusion temperature of the constitution elements of the wetting layers 18 and the metallic layers, is higher than the reaction temperature of the constitution elements, and titanium nitride(TiN) is desirable. It is thicker than the sidewalls of the wetting layers 18 and is more uniform. Then, the recessed parts 12 are completely filled with the conduction layers a metal such as aluminum(Al). In the reaction between Ti of the wetting layers 18 and Al of the conduction layers 22, Ti and Al are unable to diffuse at a temperature lower than 430 deg.C, and they are brought into contact with each other and do not react.

公开(公告)号：JPH11330244A

公开(公告)日：1999-11-30

申请号：JP9247299

申请日：1999-03-31

Applicant: SIEMENS AG ,  IBM

Inventor： CLEVENGER LAWRENCE A ,  FILIPPI RONALD G ,  HOINKIS MARK ,  HURD JEFFERY L ,  IGGULDEN ROY C ,  PALM HERBERT ,  POETZLBERGER HANS W ,  RODBELL KENNETH P ,  SCHNABEL FLORIAN ,  WEBER STEFAN ,  MEHTER EBRAHIM A

IPC: H01L21/28 ,  H01L21/768 ,  H01L23/485 ,  H01L23/532

Abstract: PROBLEM TO BE SOLVED: To provide an interconnection with a damascene structure having an improved reliability, by using a liner for surrounding or sealing a conductor to give random crystal grain orientation to a conductive material. SOLUTION: A layer 137 is deposited on an insulating layer 130. A layer for lining the wall and the bottom of the contact opening functions as a base coat or liner for a conductive layer 138 to be subsequently deposited to fill the contact opening, and the degree of crystal grain orientation randomness of a material that fills the damascene structure is expanded. A parameter used for depositing a TiN layer is selected to expand the degree of base coat crystal grain orientation randomness and/or amorphous characteristics. The liner has an enough thickness to ensure the random crystal grain orientation of the conductive material to be subsequently deposited. Thus, the interconnection in an IC having the improved reliability can be obtained.

公开(公告)号：JP2000150520A

公开(公告)日：2000-05-30

申请号：JP29239599

申请日：1999-10-14

Applicant: IBM ,  SIEMENS AG

Inventor： CICHY HOLMER U ,  CLAVENGER LAWRENCE A ,  FILIPPI RONALD G ,  IGGULDEN ROY C ,  RESTAINO DARRYL D ,  RODBELL KENNETH P ,  WEBER STEFAN J ,  WEIGAND PETER

IPC: H01L23/52 ,  H01L21/28 ,  H01L21/3205 ,  H01L23/532 ,  H01L27/02

Abstract: PROBLEM TO BE SOLVED: To obtain an interconnection part for an integrated circuit with improved electromigration characteristics. SOLUTION: An interconnection structure part includes titanium lower and upper layers 14 and 20, and the two titanium layers differ from each other in cleanliness. In order to improve electromigration, and to strongly obtain an intermediate layer 18 with texture, the titanium lower layer 14 is not relatively contaminated, and contains a contaminant of at most 5 wt.%. The intermediate layer 18 containing aluminum is formed between the titanium lower and upper layers 14 and 20. The titanium upper layer 20 is relatively more contaminated as compared with the titanium lower layer 14, contains a contaminant of more than 5 wt.%, and contributes to the maintenance of low area resistance.

公开(公告)号：HK1036150A1

公开(公告)日：2001-12-21

申请号：HK01106779

申请日：2001-09-26

Applicant: IBM ,  SIEMENS AG

Inventor： CLEVENGER LARRY ,  FILIPPI RONALD G ,  GAMBINO JEFFREY ,  GIGNAC LYNNE ,  HURD JEFFERY L ,  HOINKIS MARK ,  IGGULDEN ROY C ,  MEHTER EBRAHIM ,  RODBELL KENNETH P ,  SCHNABEL FLORIAN ,  WEBER STEFAN J

IPC: H01L20060101 ,  H01L

公开(公告)号：EP1908105A4

公开(公告)日：2012-08-22

申请号：EP06749575

申请日：2006-04-07

Applicant: IBM

Inventor： CABRAL CYRIL JR ,  GORDON MICHAEL S ,  RODBELL KENNETH P

IPC: H01L23/556 ,  H01L23/485

CPC classification number: H01L23/556 ,  H01L21/76801 ,  H01L21/76834 ,  H01L21/76838 ,  H01L23/5329 ,  H01L23/53295 ,  H01L23/585 ,  H01L24/03 ,  H01L24/05 ,  H01L24/12 ,  H01L24/16 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05006 ,  H01L2224/05554 ,  H01L2224/05572 ,  H01L2224/05599 ,  H01L2224/13007 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/16 ,  H01L2224/451 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01055 ,  H01L2924/01057 ,  H01L2924/01063 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/01092 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/15174 ,  H01L2924/15312 ,  H01L2924/15787 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2224/05552

公开(公告)号：EP2100241A4

公开(公告)日：2011-01-12

申请号：EP07865741

申请日：2007-12-17

Applicant: IBM

Inventor： FIORENZA GIOVANNI ,  MURRAY CONAL E ,  RODBELL KENNETH P ,  TANG HENRY

IPC: G06F17/50

CPC classification number: G06F17/5009 ,  G06F2217/16

公开(公告)号：EP1540276A4

公开(公告)日：2006-08-23

申请号：EP03793095

申请日：2003-08-15

Applicant: HYPERNEX INC ,  IBM

Inventor： KOZACZEK KRZYSZTOF J ,  KURTZ DAVID S ,  MORAN PAUL R ,  MARTIN ROGER I ,  DEHAVEN PATRICK W ,  RODBELL KENNETH P ,  MALHOTRA SANDRA G

IPC: G01B15/02 ,  G01N23/20 ,  G01N23/223

CPC classification number: G01N23/20 ,  G01B15/02

Abstract: An apparatus and method for mapping film thickness of one or more textured polycrystalline thin films. Multiple sample films of known thickness are provided. Each sample film is irradiated by x-ray at a measurement point to generate a diffraction image that captures a plurality of diffraction arcs. Texture information (i.e., pole densities) of the sample film is calculated based on incomplete pole figures collected on the diffraction image and used to correct the x-ray diffraction intensities from such sample. The corrected diffraction intensities are integrated for each sample film, and then used for constructing a calibration curve that correlates diffraction intensities with respective known film thickness of the sample films. The film thickness of a textured polycrystalline thin film of unknown thickness can therefore be mapped on such calibration curve, using a corrected and integrated diffraction intensity obtained for such thin film of unknown thickness.

公开(公告)号：JPH10308363A

公开(公告)日：1998-11-17

申请号：JP11252698

申请日：1998-04-22

Applicant: IBM ,  TOSHIBA CORP

Inventor： USUI TAKAMASA ,  DEHAVEN PATRICK W ,  RODBELL KENNETH P ,  FILIPPI RONALD G ,  YANG CHI-HUA ,  KATADA TOMIO ,  AOCHI HIDEAKI

IPC: C23C14/14 ,  C23C14/34 ,  C23C16/06 ,  C23C28/02 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L23/532

Abstract: PROBLEM TO BE SOLVED: To provide a manufacture of a metalization structure having a superior electrical mobility, highly textured, and suitable for electrical connection or wiring. SOLUTION: The manufacture of a metalization structure comprises depositing a first lower layer 13 made of IVA family metal such as titan and having a thickness of approximately 90 Å to 110 Å on a substrate and after which, electrical depositing a layer made of at least one element selected from a group consisting of aluminum and aluminum alloy deposited on the layer 13 in such a way as to be in ohmic contact with the layer 13.

公开(公告)号：EP1800335A4

公开(公告)日：2008-01-02

申请号：EP05797431

申请日：2005-09-20

Applicant: IBM

Inventor： PETRARCA KEVIN S ,  KRISHNAN MAHADEVAIYER ,  LOFARO MICHAEL ,  RODBELL KENNETH P

IPC: H01L21/31 ,  H01L21/44 ,  H01L21/469 ,  H01L21/4763

CPC classification number: H01L21/76873 ,  H01L21/2855 ,  H01L21/7684 ,  H01L21/76877

Abstract: Defects on the edge of copper interconnects for back end of the line semiconductor devices are alleviated by an interconnect that comprises an impure copper seed layer (440). The impure copper seed layer (440) covers a barrier layer (230), which covers an insulating layer (115) that has an opening. Electroplated copper fills the opening in the insulating layer (115). Through a chemical mechanical polish, the barrier layer (230), the impure copper seed layer (440) derived from an electroplated copper bath, and the electroplated copper are planarized to the insulating layer (115).

公开(公告)号：EP1299210A4

公开(公告)日：2004-11-17

申请号：EP01952272

申请日：2001-06-27

Applicant: IBM ,  FREUDENBERG NON WOVENS

Inventor： CHEN SHYNG-TSONG ,  CHUNG ALEX SIU KEUNG ,  DAVIS KENNETH M ,  HSU OSCAR KAI CHI ,  RODBELL KENNETH P

IPC: B24B37/26 ,  B24D13/14 ,  H01L21/304 ,  B24B1/00 ,  B23C3/28 ,  B24B37/04 ,  B24D18/00 ,  B26D7/01

CPC classification number: B24B37/26 ,  Y10T409/303808 ,  Y10T409/306608 ,  Y10T409/308624

Abstract: Grooves (70, 76, 78, & 80-82) are formed in a CMP pad (12) by positioning the pad (12) on a supporting surface (10) with a working surface (22) of the pad (12) in spaced relation opposite to a router bit (24) and at least one projecting stop member (33) adjacent to the router bit (24), an outer end portion of the bit (24) projecting beyond the stop (33). When the bit (24) is rotated, relative axial movement between the bit (24) and the pad (12) causes the outer end portion of the bit (24) to cut an initial recess in the pad (12). Relative lateral movement between the rotating bit (24) and the pad (12) then forms a groove (70) which extends laterally away from the recess and has a depth substantially the same as that of the recess. The depths of the initial recess and the groove (70) are limited by applying a vacuum to the working surface (22) of the pad (12) to keep it in contact with the stop member(s) (33). Different lateral movements between the bit (24) and the pad (12) are used to form a variety of groove patterns (76, 78, & 80-82), the depths of which are precisely controlled by the stop member(s) (33).